MOTTA, ALBERTO
MOTTA, ALBERTO
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
Growth and characterization of buried GaSb p-n junctions for photovoltaic applications
2011 Baldini, ; Michele, ; Ghezzi, ; Carlo, ; Parisini, ; Antonella, ; Tarricone, ; Luciano, ; Vantaggio, ; Salvatore, ; Gombia, Enos; Gombia, Enos; Motta, Alberto; Motta, Alberto; Gasparotto, ; A,
Homoepitaxial growth of germanium for photovoltaic and thermophotovoltaic applications
2011 Bosi; Matteo; Attolini; Giovanni; Calicchio; Marco; Ferrari; Claudio; Frigeri; Cesare; Gombia; Enos; Motta; Alberto; Rossi; Francesca
Bulk micro defects behaviour in not-intentionally contaminated epi Si submitted to relaxation and segregation gettering
2007 Frigeri C.; Gombia E.; Motta A.
Bulk micro defects behaviour in not-intentionally contaminated epi Si submitted to relaxation and segregation gettering
2007 C. Frigeri; E. Gombia;A. Motta
Competition between internal and heavy doping gettering options in epi-silicon
2006 Frigeri C.; Gombia E.; Motta A.
Study of electrically active defects in GaAs/InAs/GaAs QDs structures by DLTS and TEM
2006 Prezioso, M; Gombia, E; Mosca, R; Nasi, L; Motta, A; Frigeri, P; Trevisi, G; Seravalli, L; Franchi, S
Experimental determination of the X-ray attenuation coefficient of In at 8.047 keV
2005 Ferrari C.; Verdi N.; Motta A.
Deep level investigation on n-In0.35Ga0.65As/GaAs structures
1998 Gombia, E; Mosca, R; Pal, D; Motta, A; Nasi, L; Bosacchi, A; Franchi, Secondo; S,
Topology of the calmodulin-melittin complex
1998 Scaloni, A; Miraglia, N; Orru, S; Amodeo, P; Motta, A; Marino, G; Pucci, P
Influence of preparation procedure on the characteristics of Schottky barriers fabricated in situ on MBE GaSb
1997 Mosca, R; Gombia, E; Motta, A; Bosacchi, A; Franchi, S; Beneventi, C; Ghezzi, C; Magnanini, R
Quasi-Schottky contacts on n-In0.35Ga0.65As epitaxial layers deposited on GaAs substrates
1996 Gombia, E. Mosca, R. ; Motta, A. ; Chaabane, H. ; Bosacchi, A. ; Franchi, S.
Anomalous thermionic-field emission in epitaxial Al/n-AlGaAs junctions
1994 Horváth, Zsj; Bosacchi, A; Franchi, S; Gombia, E; Mosca, R; Motta, A
PREPARATION AND CHARACTERISATION OF LEAD ZIRCONATE TITANATE THIN FILMS, STRUCTURAL AND ELECTRICAL CHARACTERISATION
1991 Leccabue, F; Watts, Be; Melioli, E; Motta, A; Panizzieri, R; Chiorboli, G; Franco, G; Allegrini, M; Arimondo, E; Iembo, A
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Growth and characterization of buried GaSb p-n junctions for photovoltaic applications | 1-gen-2011 | Baldini, ; Michele, ; Ghezzi, ; Carlo, ; Parisini, ; Antonella, ; Tarricone, ; Luciano, ; Vantaggio, ; Salvatore, ; Gombia, Enos; Gombia, Enos; Motta, Alberto; Motta, Alberto; Gasparotto, ; A, | |
Homoepitaxial growth of germanium for photovoltaic and thermophotovoltaic applications | 1-gen-2011 | Bosi; Matteo; Attolini; Giovanni; Calicchio; Marco; Ferrari; Claudio; Frigeri; Cesare; Gombia; Enos; Motta; Alberto; Rossi; Francesca | |
Bulk micro defects behaviour in not-intentionally contaminated epi Si submitted to relaxation and segregation gettering | 1-gen-2007 | Frigeri C.; Gombia E.; Motta A. | |
Bulk micro defects behaviour in not-intentionally contaminated epi Si submitted to relaxation and segregation gettering | 1-gen-2007 | C. Frigeri; E. Gombia;A. Motta | |
Competition between internal and heavy doping gettering options in epi-silicon | 1-gen-2006 | Frigeri C.; Gombia E.; Motta A. | |
Study of electrically active defects in GaAs/InAs/GaAs QDs structures by DLTS and TEM | 1-gen-2006 | Prezioso, M; Gombia, E; Mosca, R; Nasi, L; Motta, A; Frigeri, P; Trevisi, G; Seravalli, L; Franchi, S | |
Experimental determination of the X-ray attenuation coefficient of In at 8.047 keV | 1-gen-2005 | Ferrari C.; Verdi N.; Motta A. | |
Deep level investigation on n-In0.35Ga0.65As/GaAs structures | 1-gen-1998 | Gombia, E; Mosca, R; Pal, D; Motta, A; Nasi, L; Bosacchi, A; Franchi, Secondo; S, | |
Topology of the calmodulin-melittin complex | 1-gen-1998 | Scaloni, A; Miraglia, N; Orru, S; Amodeo, P; Motta, A; Marino, G; Pucci, P | |
Influence of preparation procedure on the characteristics of Schottky barriers fabricated in situ on MBE GaSb | 1-gen-1997 | Mosca, R; Gombia, E; Motta, A; Bosacchi, A; Franchi, S; Beneventi, C; Ghezzi, C; Magnanini, R | |
Quasi-Schottky contacts on n-In0.35Ga0.65As epitaxial layers deposited on GaAs substrates | 1-gen-1996 | Gombia, E. Mosca, R. ; Motta, A. ; Chaabane, H. ; Bosacchi, A. ; Franchi, S. | |
Anomalous thermionic-field emission in epitaxial Al/n-AlGaAs junctions | 1-gen-1994 | Horváth, Zsj; Bosacchi, A; Franchi, S; Gombia, E; Mosca, R; Motta, A | |
PREPARATION AND CHARACTERISATION OF LEAD ZIRCONATE TITANATE THIN FILMS, STRUCTURAL AND ELECTRICAL CHARACTERISATION | 1-gen-1991 | Leccabue, F; Watts, Be; Melioli, E; Motta, A; Panizzieri, R; Chiorboli, G; Franco, G; Allegrini, M; Arimondo, E; Iembo, A |