CNR Institutional Research Information System

MODESTI, SILVIO
 Distribuzione geografica
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Continente #
NA - Nord America 165
AS - Asia 78
EU - Europa 26
AF - Africa 2
SA - Sud America 2
OC - Oceania 1
Totale 274
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Nazione #
US - Stati Uniti d'America 165
SG - Singapore 63
IT - Italia 10
KR - Corea 8
DE - Germania 6
FI - Finlandia 3
GB - Regno Unito 2
HK - Hong Kong 2
MA - Marocco 2
AR - Argentina 1
AU - Australia 1
BO - Bolivia 1
CN - Cina 1
GR - Grecia 1
HU - Ungheria 1
IE - Irlanda 1
IN - India 1
IR - Iran 1
NL - Olanda 1
PH - Filippine 1
SE - Svezia 1
UZ - Uzbekistan 1
Totale 274
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Città #
Santa Clara 139
Singapore 49
Seoul 8
Falkenstein 3
Hamburg 3
Helsinki 3
Hong Kong 2
Milan 2
Spinea 2
Venice 2
Athens 1
Bologna 1
Buenos Aires 1
Derby 1
Dublin 1
La Paz 1
London 1
Manila 1
Newark 1
Phoenix 1
Rabat 1
Rome 1
Sopron 1
Tashkent 1
Totale 227
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Nome #
Low-temperature insulating phase of the Si(111)-7x7 surface 25
Experimental Characterization of Separate Absorption–Multiplication GaAs Staircase Avalanche Photodiodes under Continuous Laser Light Reveals Periodic Oscillations at High Gains 16
Proximity-induced ferromagnetism and chemical reactivity in few-layer VSe2 heterostructures 15
Giant Rashba-splitting of one-dimensional metallic states in Bi dimer lines on InAs(100) 14
High spatial resolution studies of microscopic capacitors in GaAs 13
Microscopic Mechanisms of Self-Compensation in Si delta-doped GaAs 12
Computational and experimental imaging of Mn defects on GaAs (110) cross-sectional surfaces 12
Anisotropic ordered planar growth of ?-Sexithienyl thin films 12
Determination of the (3x3)-Sn/Ge(111) structure by photoelectron diffraction 11
Nitrogen-induced hindering of in incorporation in InGaAsN 11
In-N and N-N correlation in InxGa1-xAs1-yNy/GaAs quasi-lattice-matched quantum wells: A cross-sectional scanning tunneling microscopy study 11
Cross-sectional imaging of sharp Si interlayers embedded in gallium arsenide 11
Correction of systematic errors in scanning tunneling spectra on semiconductor surfaces: The energy gap of Si(111)- 7×7 at 0.3 K 11
Insulating ground state of Sn/Si(111)-(root 3x root 3)R30 degrees 10
Dispersion and intrinsic width of image resonances measured by resonant inelastic electron scattering: the ? phase of Pb/Ge(111) 10
Doping of epitaxial graphene by direct incorporation of nickel adatoms 10
Order-disorder character of the (3 x 3) to (sqrt3 x sqrt3)R30° phase transition of Sn on Ge(111) 9
Photoelectron diffraction study of the (3x3)-Sn/Ge(111) structure 9
First-order orientational-disordering transition on the (111) surface of C60 9
Completamento sistema STM in UHV operante a 5 K 9
Microscopic and spectroscopic characterization of paintbrush-like single-walled carbon nanotubes 9
Brillouin-scattering determination of the elastic constants of epitaxial fcc C60 film 8
Temperature and momentum dependence of the spectral function of the charge-density wave and of the normal ? phase of Pb/Ge(111) 7
Dynamics of the Si(100) surface 7
High-excitation luminescence in direct-GAP GaAs1-xPx: E-H plasma expansion effects 7
Single Metal Atom Catalysts and ORR: H-Bonding, Solvation, and the Elusive Hydroperoxyl Intermediate 6
Chemisorption and fragmentation of C60 on Pt(111) and Ni(110) 6
The EEL spectrum of the triplet exciton of C60 and the theoretical analysis of its vibronic structure 5
The surface triplet exciton of C60 (111) 5
Totale 300
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Categoria #
all - tutte 1.281
article - articoli 1.179
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2.460
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202417 0 0 0 0 0 0 0 0 2 0 13 2
2024/2025283 2 2 45 19 130 44 1 14 26 0 0 0
Totale 300