CNR Institutional Research Information System

PELOSI, CLAUDIO
 Distribuzione geografica
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Continente #
AS - Asia 1.575
NA - Nord America 1.048
SA - Sud America 355
EU - Europa 218
AF - Africa 25
OC - Oceania 4
Totale 3.225
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Nazione #
US - Stati Uniti d'America 1.018
SG - Singapore 761
BR - Brasile 296
CN - Cina 289
VN - Vietnam 190
HK - Hong Kong 154
FR - Francia 107
KR - Corea 58
IT - Italia 28
IN - India 24
AR - Argentina 20
JP - Giappone 20
GB - Regno Unito 16
DE - Germania 15
ID - Indonesia 15
CO - Colombia 12
CA - Canada 11
MX - Messico 10
RU - Federazione Russa 10
BD - Bangladesh 9
IQ - Iraq 9
NL - Olanda 9
PK - Pakistan 9
EC - Ecuador 8
IL - Israele 7
MA - Marocco 7
PY - Paraguay 7
SA - Arabia Saudita 6
AT - Austria 5
FI - Finlandia 5
PL - Polonia 5
ZA - Sudafrica 5
UZ - Uzbekistan 4
VE - Venezuela 4
AU - Australia 3
CL - Cile 3
EG - Egitto 3
JO - Giordania 3
PE - Perù 3
TN - Tunisia 3
TR - Turchia 3
AL - Albania 2
BO - Bolivia 2
CR - Costa Rica 2
DO - Repubblica Dominicana 2
DZ - Algeria 2
ES - Italia 2
HN - Honduras 2
IE - Irlanda 2
JM - Giamaica 2
KZ - Kazakistan 2
SN - Senegal 2
SY - Repubblica araba siriana 2
TH - Thailandia 2
UA - Ucraina 2
AE - Emirati Arabi Uniti 1
AM - Armenia 1
AZ - Azerbaigian 1
BE - Belgio 1
BH - Bahrain 1
BW - Botswana 1
BY - Bielorussia 1
CZ - Repubblica Ceca 1
FJ - Figi 1
GH - Ghana 1
GR - Grecia 1
KE - Kenya 1
KW - Kuwait 1
LB - Libano 1
LT - Lituania 1
LU - Lussemburgo 1
LV - Lettonia 1
MD - Moldavia 1
NP - Nepal 1
OM - Oman 1
PR - Porto Rico 1
SE - Svezia 1
SI - Slovenia 1
Totale 3.225
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Città #
Santa Clara 634
Singapore 453
Hong Kong 150
Hefei 129
Lauterbourg 86
San Jose 80
Ho Chi Minh City 76
Seoul 56
Hanoi 38
Ashburn 36
Beijing 33
Dallas 28
Los Angeles 24
São Paulo 19
Buffalo 15
Da Nang 14
Orem 13
New York 10
Tokyo 9
Rio de Janeiro 8
Rome 7
Baghdad 6
Chicago 6
Minamishinagawa 6
Nuremberg 6
Bengaluru 5
Brasília 5
Curitiba 5
Haiphong 5
Milan 5
Ribeirão Preto 5
Cuiabá 4
Elk Grove Village 4
Florianópolis 4
Frankfurt am Main 4
Goiânia 4
Guangzhou 4
Guarulhos 4
Helsinki 4
Hải Dương 4
Manchester 4
Moscow 4
Phoenix 4
Porto Alegre 4
Quận Một 4
Santo André 4
Americana 3
Asunción 3
Bogotá 3
Brumadinho 3
Bắc Giang 3
Chennai 3
Guayaquil 3
Ilhéus 3
Jakarta 3
Jeddah 3
Johannesburg 3
Karachi 3
Las Vegas 3
Maceió 3
Mexico City 3
North Charleston 3
Porto Seguro 3
Tashkent 3
Agadir 2
Amman 2
Amsterdam 2
Armenia 2
Bakersfield 2
Barnaul 2
Barra Mansa 2
Bảo Lộc 2
Cabo Frio 2
Camaquã 2
Cametá 2
Campinas 2
Can Tho 2
Carapicuíba 2
Casablanca 2
Catania 2
Caxias do Sul 2
Changsha 2
Chengdu 2
Coração de Jesus 2
Criciúma 2
Cruzeiro 2
Daejeon 2
Dakar 2
Fortaleza 2
Greenville 2
Ha Long 2
Hoàng Mai 2
Islamabad 2
Itajaí 2
Jaú 2
Jundiaí 2
Kingston 2
La Paz 2
Lahore 2
Limeira 2
Totale 2.158
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Nome #
Manuale di utilizzo - Reattore MOVPE 3 69
The effect of feeding phase stoichiometry on the origin of crystal defects in hydride VPE InP layers 62
CRYSTAL-GROWTH, THERMODYNAMICAL AND STRUCTURAL STUDY OF COGA2O4 AND ZNCR2O4 SINGLE-CRYSTALS 61
Surface morphology and Raman scattering in GaAs/InAs(111) heterostructures grown by MOVPE 57
On the influence of defects on epitaxial InP layers 54
Epitaxial germanium for high efficiency MJ solar cells and III-V based structures on silicon 54
Characterization of homoepitaxial germanium p-n junctions for photovoltaic and thermophotovoltaic applications 49
Epitaxial growth and Characterization of ternary and quaternary III-V semiconductors 47
Temperature dependence of photoluminescence from ordered GaInP2 epitaxial layers 47
A new MOVPE reactor for heteroepitaxial GaAs deposition on large-scale Ge substrates 44
Temperature quenching of photoluminescence of ordered GaInP2 alloy under different excitation densities 44
Unfreezing of molecular motions in protein-polymer conjugates: a calorimetric study 44
GROWTH AND CHARACTERIZATION OF GaAs1-xNx EPITAXIAL LAYERS 42
Characterization of homoepitaxial germanium p-n junction for photovoltaic and thermophotovoltaic applications 37
ALD mechanisms in the growth of amorphous Al2O3 onto different substrates 36
Aspetti generali della crescita epitassiale MOCVD 36
Detection of the Interlayer at the GaAs-on-InGaP Interface in MOVPE InGaP/GaAs by the Dark Field Method 35
Evaluation of the composition of the interlayer at the inverted interface in InGaP/GaAs heterojunctions 35
Characterization of homoepitaxial germanium p-n junction for photovoltaic and thermophotovoltaic applications 35
Thermodynamic study of interface between InGaP/GaAs and GaAs/InGaP heterosystems 34
Characterisation of GaAsN layers grown by MOVPE 34
Relationship between V/III ratio and generation of defects in MOVPE grown (001) GaAs/Ge heterostructures 34
Combined (200) DF-TEM and X-ray diffraction investigations of interfacesin MOVPE grown InGaP/GaAs heterojunctions 34
MOVPE Growth of Homoepitaxial of Germanium Cells for Photovoltaic and Thermophotovoltaic Applications Using Iso-Buthyl Germane as Organic Precursor 34
Colaboración italo-argentina para el estudio de celdas solares basadas en materiales III-V 34
Homo and hetero epitaxy of Germanium using isobutylgermane 34
Homo and hetero epitaxy of Germanium using isobutylgermane 34
Mechanical properties of some binary, ternry and quaternary III-V compound semiconductor alloys 33
Analysis of temperature behavior of polarized photoluminescence in ordered GaInP layer 33
AVANCES EN EL ESTUDIO DE CELDAS SOLARES BASADAS EN MATERIALES III-V 33
Hydride vapour phase epitaxy growth and characterization of GaN layers 33
ALD growth, thermal treatments and characterisation of Al2O3 layers 32
Epitaxial preparation of germanium cells for photovoltaic and thermophotovoltaic applications 32
Microindentation studies of Hg0,7Cd0,3Te/CdTe compound semiconductor alloy 31
X-Ray study of GaAs/Ge heterostructures: Relationship between interfacial defects and growth processes 30
In-depth analysis of the interfaces in InGaAs/InGaP heterosystem 30
Characterization of surface deformation around Vickers indentations in InGaAsP epilayers on InP substrate 30
GROWTH THERMODYNAMIC AND MAGNETOSTRUCTURAL STUDY OF FeGa2O4 CRYSTALS 30
Composition determination of the interlayer at the inverted interfaces in InGaP/GaAs heterojunctions 30
Celle solari: rassegna teorica e applicativa 30
Heterogeneous nucleation of misfit dislocations in InGaP/GaAs layers grown by MOVPE 30
Relationship between interfacial defects and growth processes in GaAs/Ge heterostructures 30
Parasitic Interlayer at the GaAs-on-InGaP Interface in MOVPE InGaP/GaAs: A Study by the Chemically Sensitive (200) Diffraction 30
Microstructure of hexagonal GaN grown on (001) GaAs by Hydride VPE 29
Crystallographic properties of some ternary and multinary Te-based semiconductors 29
Characterisation of GaAsN layers grown by MOVPE 29
Detection of the interlayer at the GaAs-on-InGaP interface in MOVPE InGaP/GaAs by the Dark Field Method 29
The hydride VPE growth and the experimental condition study of quaternary InGaAsP Layers 29
Electron microscopy study of HgCdTe/CdTe epistructures grown by ISOVPE 29
Stacking fault pyramids, island growth and misfit dislocations in VPE InGaAs/InP heterostructures 28
X-Ray study of GaAs/Ge heterostructures: Relationship between interfacial defects and growth process 28
The potential of III-V semiconductors as terrestrial photovoltaic devices 28
Dependence of the defect structure of InxGa1-xAs/InP epilayers on the In/Ga ratio in the vapour phase 28
POLYMORPHISM IN SOME Te-BASED TERNARY AND MULTINARY COMPOUNDS 28
TEM and HRXRD analysis of PLP MOVPE grown InGaP/GaAs epilayers 28
Interface studies of InGaP epilayers grown by LP MOVPE 28
The use of Arsenic as surfactant in the epitaxy of Germanium 27
Heterogeneous nucleation of misfit dislocations in InGaP/GaAs layers grown by MOVPE 27
The role of V/III ratio in the growth and structural properties of Metalorganic Vapor Phase Epitaxy GaAs/Ge heterostructures 27
On the nature of the interlayer at the interface in MOVPE InGaP/GaAs heterojunctions 27
Detailed DF-TEM and X-ray diffraction investigations of interfaces in MOVPE grown InGaP/GaAs heterojunctions 27
Dislocation Generation Mechanisms and Layer Growth in InP Epitaxy as a Function of Growth Conditions 27
MOVPE growth and characterization of GaAs1-xNx epitaxial layers 26
Designing a large scale CVD reactor for GaAs growth on Ge substrates by multi-hierachy modling 26
Dislocation Generation Mechanisms and layer growth in InP epitaxy as a function of growth conditions 26
In-depth analysis of the interfaces in GaAs/InGaP heterosystem 26
Heteroepitaxial MOVPE growth of GaInPN alloys on Si 26
Optical and morphological chacteristics of LPMOVPE grown lattice matched GaInP/GaAs heterostructures 26
Comparative study of the photoluminescence of InGaP layers grown on GaAs substrates by LPE and MOVPE techniques 26
Structural Analysis of InGaP/GaAs Layers Grown by MOVPE 26
The influence of PH3 flow rate on the origin of crystal defects in hydride VPE InP layers 26
The properties of GaInP/GaAs heterostructures as a function of growth temperature 26
Influence on the Cd and Hg interdiffusion on the dislocation formation in ISOVPE HgCdTe/CdTe epilayers 25
Growth of InGaAsP layers by hydride VPE 25
HRTEM and CTEM study of differently lattice mismatched InxGa1-xAs/InP heterostructures grown by VPE 25
The morphological and structural characterization of LP-MOVPE grown InGaP/GaAs heterostructures 25
Homo and hetero epitaxy of Germanium using isobutylgermane 25
The growth of GaAs/Ge heterostructures by MOVPE and their structural characterization 24
Influence of substrate growth temperature on the CuPt-type ordering in lattice-matched GaInP/GaAs heterostructures 24
Raman and photoluminescence studies of MOVPE grown GaAs1-xNx epitaxial layers 24
Investigation of the GaAs-pyramids overgrowth using MOCVD 24
Dislocation/stacking fault interactions and their effects on the hillock growth in epitaxial layers 24
Structural and microanalytical characterization of Hydride VPE grown InxGa1-xAs/InP heteroepitaxies 24
Electron microscopy investigations of InxGa1-xAs epilayers 24
Dependence of the defect structure of InxGa1-xAs/InP epilayers on the In/Ga ratio in the vapour phase 24
Thermodynamical analysis of abrupt interfaces of InGaP/GaAs and GaAs/InGaP heterostructures 24
Relationship between crystal defects, Ge outdiffusion and V/III ratio in MOVPE grown (001) GaAs/Ge 24
Dislocation/stacking fault interactions and their effects on the hillock growth in epitaxial layers 23
Ternary and quaternary III-V semiconductors grown by HVPE 23
Interface analysis of InGaP/GaAs and GaAs/InGaP heterosystems 23
Growth conditions and crystal defects in hydride VPE InP homoepitaxial layers 22
Assessment of NSOM resolution on III-V semiconductor thin films 22
Optical and structural characterization of LP MOVPE grown lattice matched gainp/gaas heterostructures 22
Study of narrow ingap/(In)gaas quantum wells 22
Relationship between crystal defects, Ge outdiffusion and V/III ratio in MOVPE grown (001) GaAs/Ge 22
The growth and characterization of InP-matched InGaAs layers 22
Electron beam induced current and cathodoluminescence study of the recombination activity of stacking faults and hillocks in hydride vapour phase epitaxy InP 21
Relationship between V/III ratio and formation of defects in MOCVD grown (001) GaAs/Ge heterostructures 21
TEM study of dislocation generation mechanisms in InP/InP layers as a function of growth conditions 21
Planar defects and misfit dislocations in (001) GaAs/Ge heterostructures MOCVD grown with different V/III ratio 21
Totale 3.099
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Categoria #
all - tutte 10.622
article - articoli 4.595
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 15.217
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/20249 0 0 0 0 0 0 0 0 0 0 8 1
2024/20251.393 2 3 88 72 530 104 0 31 2 9 288 264
2025/20261.826 72 153 229 302 344 50 327 122 93 88 46 0
Totale 3.228