CNR Institutional Research Information System

PELOSI, CLAUDIO
 Distribuzione geografica
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Continente #
AS - Asia 1.613
NA - Nord America 1.323
SA - Sud America 384
EU - Europa 231
AF - Africa 26
OC - Oceania 4
Continente sconosciuto - Info sul continente non disponibili 3
Totale 3.584
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Nazione #
US - Stati Uniti d'America 1.274
SG - Singapore 762
BR - Brasile 304
CN - Cina 290
VN - Vietnam 199
HK - Hong Kong 154
FR - Francia 108
KR - Corea 58
IT - Italia 35
CA - Canada 24
ID - Indonesia 24
IN - India 24
AR - Argentina 21
JP - Giappone 20
BD - Bangladesh 19
CO - Colombia 19
GB - Regno Unito 18
EC - Ecuador 16
DE - Germania 15
MX - Messico 10
PK - Pakistan 10
RU - Federazione Russa 10
IQ - Iraq 9
NL - Olanda 9
PY - Paraguay 8
IL - Israele 7
MA - Marocco 7
VE - Venezuela 7
SA - Arabia Saudita 6
AT - Austria 5
FI - Finlandia 5
PL - Polonia 5
ZA - Sudafrica 5
CR - Costa Rica 4
HN - Honduras 4
PH - Filippine 4
TH - Thailandia 4
UZ - Uzbekistan 4
AU - Australia 3
BO - Bolivia 3
CL - Cile 3
EG - Egitto 3
JO - Giordania 3
PE - Perù 3
TN - Tunisia 3
TR - Turchia 3
UA - Ucraina 3
AL - Albania 2
DO - Repubblica Dominicana 2
DZ - Algeria 2
ES - Italia 2
IE - Irlanda 2
JM - Giamaica 2
KE - Kenya 2
KZ - Kazakistan 2
LT - Lituania 2
SN - Senegal 2
SY - Repubblica araba siriana 2
AE - Emirati Arabi Uniti 1
AM - Armenia 1
AZ - Azerbaigian 1
BE - Belgio 1
BH - Bahrain 1
BW - Botswana 1
BY - Bielorussia 1
CZ - Repubblica Ceca 1
FJ - Figi 1
GH - Ghana 1
GR - Grecia 1
GT - Guatemala 1
KW - Kuwait 1
LB - Libano 1
LU - Lussemburgo 1
LV - Lettonia 1
MD - Moldavia 1
MY - Malesia 1
NP - Nepal 1
OM - Oman 1
PR - Porto Rico 1
RO - Romania 1
SE - Svezia 1
SI - Slovenia 1
TC - Turks e Caicos 1
Totale 3.581
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Città #
Santa Clara 636
Singapore 453
Hong Kong 150
Hefei 129
Lauterbourg 86
San Jose 84
Ho Chi Minh City 76
Seoul 56
Ashburn 44
Hanoi 40
Beijing 33
Dallas 30
Los Angeles 26
São Paulo 19
Buffalo 16
Da Nang 15
New York 14
Orem 14
Council Bluffs 12
Brasília 9
Milan 9
Tokyo 9
Chicago 8
Phoenix 8
Rio de Janeiro 8
Rome 8
Atlanta 6
Baghdad 6
Minamishinagawa 6
Nuremberg 6
Quito 6
Bengaluru 5
Bogotá 5
Brooklyn 5
Curitiba 5
Haiphong 5
Ribeirão Preto 5
Asunción 4
Caracas 4
Cuiabá 4
Elk Grove Village 4
Florianópolis 4
Frankfurt am Main 4
Goiânia 4
Guangzhou 4
Guarulhos 4
Guayaquil 4
Helsinki 4
Houston 4
Hải Dương 4
Karachi 4
Las Vegas 4
Manchester 4
Miami 4
Moscow 4
Porto Alegre 4
Quận Một 4
Santo André 4
Toronto 4
Americana 3
Baltimore 3
Belém 3
Birmingham 3
Brumadinho 3
Bắc Giang 3
Charlotte 3
Chennai 3
Cincinnati 3
Fort Worth 3
Grand Rapids 3
Ilhéus 3
Jakarta 3
Jeddah 3
Johannesburg 3
Maceió 3
Medellín 3
Mexico City 3
Montreal 3
Newark 3
North Charleston 3
Porto Seguro 3
Queens 3
Quảng Ngãi 3
San José 3
Santa Rosa 3
Tashkent 3
Washington 3
Yogyakarta 3
Yonkers 3
Agadir 2
Amman 2
Amsterdam 2
Armenia 2
Bakersfield 2
Balikpapan 2
Barnaul 2
Barra Mansa 2
Brockton 2
Brownwood 2
Butler 2
Totale 2.252
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Nome #
Manuale di utilizzo - Reattore MOVPE 3 72
Surface morphology and Raman scattering in GaAs/InAs(111) heterostructures grown by MOVPE 65
The effect of feeding phase stoichiometry on the origin of crystal defects in hydride VPE InP layers 63
CRYSTAL-GROWTH, THERMODYNAMICAL AND STRUCTURAL STUDY OF COGA2O4 AND ZNCR2O4 SINGLE-CRYSTALS 62
On the influence of defects on epitaxial InP layers 61
Epitaxial germanium for high efficiency MJ solar cells and III-V based structures on silicon 56
Epitaxial growth and Characterization of ternary and quaternary III-V semiconductors 53
Characterization of homoepitaxial germanium p-n junctions for photovoltaic and thermophotovoltaic applications 53
Temperature dependence of photoluminescence from ordered GaInP2 epitaxial layers 49
GROWTH AND CHARACTERIZATION OF GaAs1-xNx EPITAXIAL LAYERS 48
Temperature quenching of photoluminescence of ordered GaInP2 alloy under different excitation densities 48
Unfreezing of molecular motions in protein-polymer conjugates: a calorimetric study 48
A new MOVPE reactor for heteroepitaxial GaAs deposition on large-scale Ge substrates 45
ALD mechanisms in the growth of amorphous Al2O3 onto different substrates 41
Characterization of homoepitaxial germanium p-n junction for photovoltaic and thermophotovoltaic applications 41
MOVPE Growth of Homoepitaxial of Germanium Cells for Photovoltaic and Thermophotovoltaic Applications Using Iso-Buthyl Germane as Organic Precursor 40
Analysis of temperature behavior of polarized photoluminescence in ordered GaInP layer 40
Detection of the Interlayer at the GaAs-on-InGaP Interface in MOVPE InGaP/GaAs by the Dark Field Method 39
Combined (200) DF-TEM and X-ray diffraction investigations of interfacesin MOVPE grown InGaP/GaAs heterojunctions 39
Aspetti generali della crescita epitassiale MOCVD 38
Characterisation of GaAsN layers grown by MOVPE 37
Relationship between V/III ratio and generation of defects in MOVPE grown (001) GaAs/Ge heterostructures 37
Evaluation of the composition of the interlayer at the inverted interface in InGaP/GaAs heterojunctions 37
Homo and hetero epitaxy of Germanium using isobutylgermane 37
AVANCES EN EL ESTUDIO DE CELDAS SOLARES BASADAS EN MATERIALES III-V 37
Hydride vapour phase epitaxy growth and characterization of GaN layers 37
Homo and hetero epitaxy of Germanium using isobutylgermane 37
Thermodynamic study of interface between InGaP/GaAs and GaAs/InGaP heterosystems 36
The potential of III-V semiconductors as terrestrial photovoltaic devices 36
Colaboración italo-argentina para el estudio de celdas solares basadas en materiales III-V 36
Characterization of homoepitaxial germanium p-n junction for photovoltaic and thermophotovoltaic applications 36
Comparative study of the photoluminescence of InGaP layers grown on GaAs substrates by LPE and MOVPE techniques 36
Celle solari: rassegna teorica e applicativa 36
In-depth analysis of the interfaces in InGaAs/InGaP heterosystem 35
Mechanical properties of some binary, ternry and quaternary III-V compound semiconductor alloys 35
Epitaxial preparation of germanium cells for photovoltaic and thermophotovoltaic applications 35
Crystallographic properties of some ternary and multinary Te-based semiconductors 34
ALD growth, thermal treatments and characterisation of Al2O3 layers 34
Microindentation studies of Hg0,7Cd0,3Te/CdTe compound semiconductor alloy 34
X-Ray study of GaAs/Ge heterostructures: Relationship between interfacial defects and growth processes 33
Characterization of surface deformation around Vickers indentations in InGaAsP epilayers on InP substrate 33
The hydride VPE growth and the experimental condition study of quaternary InGaAsP Layers 33
TEM and HRXRD analysis of PLP MOVPE grown InGaP/GaAs epilayers 33
Heterogeneous nucleation of misfit dislocations in InGaP/GaAs layers grown by MOVPE 33
Relationship between interfacial defects and growth processes in GaAs/Ge heterostructures 33
Parasitic Interlayer at the GaAs-on-InGaP Interface in MOVPE InGaP/GaAs: A Study by the Chemically Sensitive (200) Diffraction 33
Stacking fault pyramids, island growth and misfit dislocations in VPE InGaAs/InP heterostructures 32
POLYMORPHISM IN SOME Te-BASED TERNARY AND MULTINARY COMPOUNDS 32
Detection of the interlayer at the GaAs-on-InGaP interface in MOVPE InGaP/GaAs by the Dark Field Method 32
Detailed DF-TEM and X-ray diffraction investigations of interfaces in MOVPE grown InGaP/GaAs heterojunctions 32
Composition determination of the interlayer at the inverted interfaces in InGaP/GaAs heterojunctions 32
Electron microscopy study of HgCdTe/CdTe epistructures grown by ISOVPE 32
Microstructure of hexagonal GaN grown on (001) GaAs by Hydride VPE 31
The use of Arsenic as surfactant in the epitaxy of Germanium 31
Characterisation of GaAsN layers grown by MOVPE 31
Heterogeneous nucleation of misfit dislocations in InGaP/GaAs layers grown by MOVPE 31
The role of V/III ratio in the growth and structural properties of Metalorganic Vapor Phase Epitaxy GaAs/Ge heterostructures 31
Dependence of the defect structure of InxGa1-xAs/InP epilayers on the In/Ga ratio in the vapour phase 31
GROWTH THERMODYNAMIC AND MAGNETOSTRUCTURAL STUDY OF FeGa2O4 CRYSTALS 31
Interface studies of InGaP epilayers grown by LP MOVPE 31
X-Ray study of GaAs/Ge heterostructures: Relationship between interfacial defects and growth process 30
On the nature of the interlayer at the interface in MOVPE InGaP/GaAs heterojunctions 30
Dislocation Generation Mechanisms and Layer Growth in InP Epitaxy as a Function of Growth Conditions 30
MOVPE growth and characterization of GaAs1-xNx epitaxial layers 29
Dislocation Generation Mechanisms and layer growth in InP epitaxy as a function of growth conditions 29
Heteroepitaxial MOVPE growth of GaInPN alloys on Si 29
The influence of PH3 flow rate on the origin of crystal defects in hydride VPE InP layers 29
The properties of GaInP/GaAs heterostructures as a function of growth temperature 29
Growth of InGaAsP layers by hydride VPE 28
Assessment of NSOM resolution on III-V semiconductor thin films 28
Dislocation/stacking fault interactions and their effects on the hillock growth in epitaxial layers 28
Optical and morphological chacteristics of LPMOVPE grown lattice matched GaInP/GaAs heterostructures 28
Dislocation/stacking fault interactions and their effects on the hillock growth in epitaxial layers 28
Structural Analysis of InGaP/GaAs Layers Grown by MOVPE 28
Designing a large scale CVD reactor for GaAs growth on Ge substrates by multi-hierachy modling 27
In-depth analysis of the interfaces in GaAs/InGaP heterosystem 27
Influence of substrate growth temperature on the CuPt-type ordering in lattice-matched GaInP/GaAs heterostructures 27
SEM-EBIC, SEM-Cathodoluminescence, and TEM investigations of crystallographic and surface defects in Hydride VPE 27
Raman and photoluminescence studies of MOVPE grown GaAs1-xNx epitaxial layers 27
Interface analysis of InGaP/GaAs and GaAs/InGaP heterosystems 27
Dependence of the defect structure of InxGa1-xAs/InP epilayers on the In/Ga ratio in the vapour phase 27
Study of narrow ingap/(In)gaas quantum wells 27
Thermodynamical analysis of abrupt interfaces of InGaP/GaAs and GaAs/InGaP heterostructures 27
The morphological and structural characterization of LP-MOVPE grown InGaP/GaAs heterostructures 27
Homo and hetero epitaxy of Germanium using isobutylgermane 27
Influence on the Cd and Hg interdiffusion on the dislocation formation in ISOVPE HgCdTe/CdTe epilayers 26
Growth conditions and crystal defects in hydride VPE InP homoepitaxial layers 26
Investigation of the GaAs-pyramids overgrowth using MOCVD 26
Structural and microanalytical characterization of Hydride VPE grown InxGa1-xAs/InP heteroepitaxies 26
HRTEM and CTEM study of differently lattice mismatched InxGa1-xAs/InP heterostructures grown by VPE 26
Relationship between crystal defects, Ge outdiffusion and V/III ratio in MOVPE grown (001) GaAs/Ge 26
Electron beam induced current and cathodoluminescence study of the recombination activity of stacking faults and hillocks in hydride vapour phase epitaxy InP 25
The growth of GaAs/Ge heterostructures by MOVPE and their structural characterization 25
Optical and structural characterization of LP MOVPE grown lattice matched gainp/gaas heterostructures 25
Electron microscopy investigations of InxGa1-xAs epilayers 25
TEM study of dislocation generation mechanisms in InP/InP layers as a function of growth conditions 25
Relationship between crystal defects, Ge outdiffusion and V/III ratio in MOVPE grown (001) GaAs/Ge 25
Ternary and quaternary III-V semiconductors grown by HVPE 24
The growth and characterization of InP-matched InGaAs layers 24
TEM and HRXRD analysis of LP MOVPE grown InGaP/GaAs epilayers 24
Totale 3.432
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Categoria #
all - tutte 12.751
article - articoli 5.584
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 18.335
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/20249 0 0 0 0 0 0 0 0 0 0 8 1
2024/20251.393 2 3 88 72 530 104 0 31 2 9 288 264
2025/20261.854 72 153 229 302 344 50 327 122 93 88 54 20
2026/2027328 80 101 147 0 0 0 0 0 0 0 0 0
Totale 3.584