In the present work we report the results of characterization of epitaxial Ge/Ge layers using vapour phase epitaxy using either only isobutilgermane as a precursor or adding doses of AsH3 as surfactant to obtain a better surface morphology. When iBuGe partial pressure was below 4×10-6, the Ge layers showed good morphology and crystallographic quality with best results on samples grown on exactly oriented (001) Ge substrates. The use AsH3 as surfactant permitted to increase the iBuGe partial pressure used in the growth without degrading the layer properties, even if TEM revealed the presence of an high defect density at the interface. It was concluded that the surfactant, even if reported as
Characterization of homoepitaxial germanium p-n junctions for photovoltaic and thermophotovoltaic applications
Ferrari C;Bosi M;Attolini G;Frigeri C;Gombia E;Pelosi C;
2008
Abstract
In the present work we report the results of characterization of epitaxial Ge/Ge layers using vapour phase epitaxy using either only isobutilgermane as a precursor or adding doses of AsH3 as surfactant to obtain a better surface morphology. When iBuGe partial pressure was below 4×10-6, the Ge layers showed good morphology and crystallographic quality with best results on samples grown on exactly oriented (001) Ge substrates. The use AsH3 as surfactant permitted to increase the iBuGe partial pressure used in the growth without degrading the layer properties, even if TEM revealed the presence of an high defect density at the interface. It was concluded that the surfactant, even if reported asI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
