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ARMIGLIATO, ALDO

ARMIGLIATO, ALDO  

Istituto per la Microelettronica e Microsistemi - IMM  

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Risultati 1 - 20 di 52 (tempo di esecuzione: 0.064 secondi).
Titolo Data di pubblicazione Autore(i) File
Comparison of Cliff-Lorimer-Based Methods of Scanning Transmission Electron Microscopy (STEM) Quantitative X-Ray Microanalysis for Application to Silicon Oxycarbides Thin Films 1-gen-2018 Parisini A.; Frabboni S.; Gazzadi G.C.; Rosa R.; Armigliato A.
Quantitative X-ray microanalysis of thin NiO films by Monte Carlo and Cliff-Lorimer methods 1-gen-2014 Aldo Armigliato; Stefano Frabboni; Gian Carlo Gazzadi;Rodolfo Rosa
FIB Preparation of a NiO Wedge-Lamella and STEM X-Ray Microanalysis for the Determination of the Experimental k(O-Ni) Cliff-Lorimer Coefficient 1-gen-2013 Armigliato, A; Frabboni, S; Gazzadi, G C; Rosa, R
Characterization of the PSG/Si interface of H3PO4 doping process for solar cells 1-gen-2011 Armigliato, A; Nobili, D; Solmi, S; Blendin, G; Schum, B; Lachowicz, A; Horzel, J
Effect of nitrogen implantation at the SiO2/SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel 1-gen-2010 Poggi A Moscatelli F; Solmi S; Armigliato A; Belsito L; Nipoti R;
Nitridation of the SiO2/SiC Interface by N+ implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs 1-gen-2010 Moscatelli, F; Poggi, A; Solmi, S; Nipoti, R; Armigliato, A; Belsito, L
X-Ray Microanalysis Combined with Monte Carlo Simulation for the Analysis of Layered Thin Films: The Case of Carbon Contamination 1-gen-2009 Armigliato, A; Rosa, R
Electron diffraction with ten nanometer beam size for strain analysis of nanodevices 1-gen-2008 Armigliato, A; Frabboni, S; Gazzadi, GC
Application of the parametric bootstrap method to determine statistical errors in quantitative X-ray microanalysis of thin films 1-gen-2007 Armigliato, A; Balboni, R; Rosa, R
Method for determination of the displacement field in patterned nanostructures by TEM/CBED analysis of split high-order Laue zone line profiles 1-gen-2007 Spessot, A; Frabboni, S; Balboni, R; Armigliato, A
Structural and analytical characterization by scanning transmission electron microscopy of silicon-based nanostructures 1-gen-2007 Armigliato A; Balboni R; Parisini A
Convergent beam electron diffraction investigation of strain induced by Ti self-aligned silicides in shallow trench Si isolation structures 1-gen-2006 Armigliato, A; Spessot, A; Balboni, R; Benedetti, A; Carnevale, G; Frabboni, S; Mastracchio, G; Pavia, G
Damage and recovery in boron doped silicon on insulator layers after high energy Si+ implantation 1-gen-2006 Ferri, M; Solmi, S; Nobili, D; Armigliato, A
La microanalisi a Raggi X in microscopia elettronica TEM e SEM 1-gen-2006 Armigliato, A
Modern developments and applications in microbeam analysis. Proceedings of the 9(th) Workshop of the European Microbeam Analysis Society (EMAS) and the 3(rd) Meeting of the International Union of Microbeam Analysis Societies (IUMAS), Florence, Italy, May 1-gen-2006 Rinaldi R; Armigliato A; Santo AP; Vaggelli G; Walker CT; Bastin GF; Gauvin R
Numerical analysis of the process-induced stresses in silicon microstructures: application to micromachined cantilever 1-gen-2006 Senez, V; Hoffmann, T; Armigliato, A; De Wolf, I
Quantitative thin-film X-ray microanalysis by STEM/HAADF: Statistical analysis for precision and accuracy determination 1-gen-2006 Armigliato A; Balboni R; Rosa R
Strain field reconstruction in shallow trench isolation structures by CBED and LACBED 1-gen-2006 Spessot, A; Frabboni, S; Balboni, R; Armigliato, A
Improving spatial resolution of convergent beam electron diffraction strain mapping in silicon microstructures 1-gen-2005 Armigliato, A; Balboni, R; Frabboni, S
Boron nitride thin films deposited by RF plasma reactive pulsed laser ablation as interlayer between WC-Co hard metals and CVD diamond films 1-gen-2004 Cappelli, E; Orlando, S; Mattei, G; Armigliato, A