A few recent applications of scanning transmission electron microscopy (STEM) methods to problems of interest for nanoelectronics are reported. They include nanometer-scaled dopant profiles by Z-contrast and strain mapping by convergent beam diffraction.
Structural and analytical characterization by scanning transmission electron microscopy of silicon-based nanostructures
Armigliato A;Balboni R;Parisini A
2007
Abstract
A few recent applications of scanning transmission electron microscopy (STEM) methods to problems of interest for nanoelectronics are reported. They include nanometer-scaled dopant profiles by Z-contrast and strain mapping by convergent beam diffraction.File in questo prodotto:
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