ALBERTAZZI, EROS
 Distribuzione geografica
Continente #
AS - Asia 496
NA - Nord America 335
EU - Europa 114
SA - Sud America 104
AF - Africa 10
OC - Oceania 1
Totale 1.060
Nazione #
US - Stati Uniti d'America 323
SG - Singapore 209
CN - Cina 118
BR - Brasile 82
VN - Vietnam 59
HK - Hong Kong 46
NL - Olanda 35
FR - Francia 27
KR - Corea 18
IT - Italia 8
AR - Argentina 7
FI - Finlandia 7
GB - Regno Unito 7
JP - Giappone 7
DE - Germania 6
BD - Bangladesh 5
EC - Ecuador 5
IN - India 5
MX - Messico 5
PL - Polonia 5
PY - Paraguay 5
IL - Israele 4
TR - Turchia 4
UZ - Uzbekistan 4
CO - Colombia 3
ES - Italia 3
IQ - Iraq 3
MA - Marocco 3
ZA - Sudafrica 3
CA - Canada 2
CZ - Repubblica Ceca 2
DO - Repubblica Dominicana 2
DZ - Algeria 2
KE - Kenya 2
NP - Nepal 2
PH - Filippine 2
PK - Pakistan 2
RU - Federazione Russa 2
SA - Arabia Saudita 2
UA - Ucraina 2
AL - Albania 1
AT - Austria 1
AU - Australia 1
BO - Bolivia 1
BY - Bielorussia 1
CH - Svizzera 1
CL - Cile 1
CR - Costa Rica 1
EE - Estonia 1
GE - Georgia 1
GR - Grecia 1
ID - Indonesia 1
JM - Giamaica 1
KG - Kirghizistan 1
MD - Moldavia 1
MY - Malesia 1
PA - Panama 1
PS - Palestinian Territory 1
RS - Serbia 1
SE - Svezia 1
SK - Slovacchia (Repubblica Slovacca) 1
TJ - Tagikistan 1
Totale 1.060
Città #
Santa Clara 182
Singapore 117
Hong Kong 44
Hefei 36
San Jose 26
Beijing 24
Ho Chi Minh City 21
Lauterbourg 19
Ashburn 17
Seoul 17
Hanoi 16
Los Angeles 16
São Paulo 7
Warsaw 5
Orem 4
Paris 4
Rio de Janeiro 4
Tashkent 4
Tokyo 4
Turku 4
Asunción 3
Belo Horizonte 3
Brooklyn 3
Buffalo 3
Bắc Ninh 3
Casablanca 3
Da Nang 3
Helsinki 3
Johannesburg 3
Naples 3
New York 3
Newark 3
Atlanta 2
Cabo Frio 2
Cadiz 2
Caxias do Sul 2
Dallas 2
Denver 2
Formosa 2
Fortaleza 2
Frankfurt am Main 2
Guayaquil 2
Haiphong 2
Kathmandu 2
Mexico City 2
Minamishinagawa 2
Mumbai 2
Nairobi 2
Niterói 2
Ponta Porã 2
Quito 2
Reggio Emilia 2
Acalanes Ridge 1
Afogados da Ingazeira 1
Afragola 1
Alegrete 1
Algiers 1
Alvorada 1
Amsterdam 1
Andalusia 1
Araruama 1
Athens 1
Baghdad 1
Barreiras 1
Belgrade 1
Belém 1
Bengaluru 1
Benito Juarez 1
Berazategui 1
Bernal Oeste 1
Betim 1
Bishkek 1
Bismarck 1
Blumenau 1
Bogotá 1
Botuverá 1
Bratislava 1
Campina Grande 1
Campinas 1
Can Tho 1
Canoinhas 1
Carazinho 1
Cayambe 1
Chengdu 1
Chisinau 1
Chortkiv 1
Concord 1
Concórdia 1
Cotia 1
Covington 1
Cuauhtémoc 1
Cuges-les-Pins 1
Curitiba 1
Darıca 1
Dayton 1
Divinolândia 1
Dores do Indaiá 1
Dushanbe 1
Elk Grove Village 1
Elmont 1
Totale 695
Nome #
Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si 81
KING 67
Investigation of heavily damaged ion implanted Si by atomistic simulation of Rutherford backscattering channeling spectra 64
Channeling characterization of defects in silicon: an atomistic approach 52
Interpretation of ion-channeling spectra in ion-implanted Si with models of structurally relaxed point defects and clusters 49
Atomistic modeling of ion channeling in Si with point defects: the role of lattice relaxation 47
Charge states distribution of 3350 kev He ions channeled in silicon 45
Computer simulation of ion channeling in Si containing structurally relaxed point defects 44
Ab initio structures of AsmV complexes and the simulation of Rutherford backscattering channeling spectra in heavily As-doped crystalline silicon 44
Codice MC-BCA per simulazione 2D impianto ionico in SiC 41
Defect-induced homogeneous amorphization of silicon: the role of defect structure and population 41
Atomistic simulation of ion channeling in heavily doped Si : As 41
Binary collision approximation modeling of ion-induced damage effects in crystalline 6H-SiC 40
Lattice location of As in heavily doped Si:As investigated by atomistic simulation of RBS-c spectra 39
Determination of He electronic energy loss in Si by Monte-Carlo simulation of Rutherford backscattering-channeling spectra 39
The Monte Carlo binary collision approximation applied to the simulation of the ion implantation process in single crystal SiC: high dose effects 38
Analysis of ion implanted Silicon by RBS-channeling: influence of the damage model. 37
Analysis of ion implanted silicon by RBS-channeling: influence of the damage model 37
Atomistic model of defects for the simulation of RBS-channeling measurements in ion irradiated silicon 37
Channeling energy loss of He2++ in Si by transmission and back-scattering measurements: Experiments and Computer modelling 37
Different methods for the determination of damage profiles in Si from RBS-channeling spectra: a comparison 33
Ion implantation induced swelling in 6H-SiC 33
Ion-channeling analysis of As relocation in heavily doped Si: As irradiated with high-energy ions 32
RBS-channeling analysis of virgin 6H-SiC: Experiments and Monte Carlo simulations 23
Dynamic Monte Carlo simulation of nonlinear damage growth during ion implantation of crystalline silicon 19
Totale 1.060
Categoria #
all - tutte 3.306
article - articoli 2.704
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 6.010


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/20247 0 0 0 0 0 0 0 0 0 0 5 2
2024/2025483 1 0 52 10 149 22 6 37 20 34 76 76
2025/2026570 25 46 44 88 158 29 79 20 27 49 5 0
Totale 1.060