ALBERTAZZI, EROS
 Distribuzione geografica
Continente #
AS - Asia 428
NA - Nord America 281
SA - Sud America 95
EU - Europa 75
AF - Africa 10
Totale 889
Nazione #
US - Stati Uniti d'America 271
SG - Singapore 188
CN - Cina 93
BR - Brasile 74
VN - Vietnam 51
HK - Hong Kong 43
NL - Olanda 34
KR - Corea 18
AR - Argentina 7
FI - Finlandia 7
EC - Ecuador 5
FR - Francia 5
GB - Regno Unito 5
IN - India 5
IT - Italia 5
PY - Paraguay 5
BD - Bangladesh 4
IL - Israele 4
MX - Messico 4
CO - Colombia 3
IQ - Iraq 3
MA - Marocco 3
UZ - Uzbekistan 3
ZA - Sudafrica 3
CZ - Repubblica Ceca 2
DE - Germania 2
DO - Repubblica Dominicana 2
DZ - Algeria 2
JP - Giappone 2
KE - Kenya 2
PH - Filippine 2
PL - Polonia 2
RU - Federazione Russa 2
SA - Arabia Saudita 2
TR - Turchia 2
UA - Ucraina 2
AL - Albania 1
BY - Bielorussia 1
CA - Canada 1
CH - Svizzera 1
CL - Cile 1
CR - Costa Rica 1
EE - Estonia 1
ES - Italia 1
GE - Georgia 1
GR - Grecia 1
ID - Indonesia 1
JM - Giamaica 1
KG - Kirghizistan 1
MD - Moldavia 1
MY - Malesia 1
NP - Nepal 1
PA - Panama 1
PK - Pakistan 1
PS - Palestinian Territory 1
SE - Svezia 1
SK - Slovacchia (Repubblica Slovacca) 1
TJ - Tagikistan 1
Totale 889
Città #
Santa Clara 181
Singapore 102
Hong Kong 42
Hefei 36
Beijing 24
Ho Chi Minh City 19
Seoul 17
Ashburn 13
Hanoi 12
Los Angeles 9
São Paulo 6
San Jose 5
Rio de Janeiro 4
Turku 4
Asunción 3
Brooklyn 3
Bắc Ninh 3
Casablanca 3
Da Nang 3
Helsinki 3
Johannesburg 3
Naples 3
Newark 3
Orem 3
Paris 3
Tashkent 3
Belo Horizonte 2
Buffalo 2
Cabo Frio 2
Caxias do Sul 2
Dallas 2
Denver 2
Formosa 2
Fortaleza 2
Guayaquil 2
Haiphong 2
Mexico City 2
Minamishinagawa 2
Mumbai 2
Nairobi 2
New York 2
Ponta Porã 2
Quito 2
Warsaw 2
Afogados da Ingazeira 1
Afragola 1
Alegrete 1
Algiers 1
Alvorada 1
Araruama 1
Athens 1
Atlanta 1
Baghdad 1
Barreiras 1
Belém 1
Bengaluru 1
Benito Juarez 1
Berazategui 1
Bernal Oeste 1
Betim 1
Bishkek 1
Bismarck 1
Blumenau 1
Bogotá 1
Botuverá 1
Bratislava 1
Campina Grande 1
Campinas 1
Can Tho 1
Canoinhas 1
Carazinho 1
Cayambe 1
Chengdu 1
Chisinau 1
Chortkiv 1
Concord 1
Concórdia 1
Cotia 1
Curitiba 1
Divinolândia 1
Dores do Indaiá 1
Dushanbe 1
Feni 1
Foz do Iguaçu 1
Frankfurt am Main 1
Giv‘atayim 1
Guro-gu 1
Haifa 1
Hamīrpur 1
Hayes 1
Hemet 1
Hialeah 1
Houston 1
Idhnā 1
Itabira 1
Ituiutaba 1
Jaraguá do Sul 1
Juiz de Fora 1
Karbala 1
Kathmandu 1
Totale 602
Nome #
Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si 71
KING 54
Investigation of heavily damaged ion implanted Si by atomistic simulation of Rutherford backscattering channeling spectra 49
Channeling characterization of defects in silicon: an atomistic approach 45
Interpretation of ion-channeling spectra in ion-implanted Si with models of structurally relaxed point defects and clusters 41
Computer simulation of ion channeling in Si containing structurally relaxed point defects 37
Defect-induced homogeneous amorphization of silicon: the role of defect structure and population 37
Atomistic modeling of ion channeling in Si with point defects: the role of lattice relaxation 37
Binary collision approximation modeling of ion-induced damage effects in crystalline 6H-SiC 36
Charge states distribution of 3350 kev He ions channeled in silicon 36
Ab initio structures of AsmV complexes and the simulation of Rutherford backscattering channeling spectra in heavily As-doped crystalline silicon 35
Determination of He electronic energy loss in Si by Monte-Carlo simulation of Rutherford backscattering-channeling spectra 35
Analysis of ion implanted Silicon by RBS-channeling: influence of the damage model. 34
Atomistic simulation of ion channeling in heavily doped Si : As 34
The Monte Carlo binary collision approximation applied to the simulation of the ion implantation process in single crystal SiC: high dose effects 33
Lattice location of As in heavily doped Si:As investigated by atomistic simulation of RBS-c spectra 33
Channeling energy loss of He2++ in Si by transmission and back-scattering measurements: Experiments and Computer modelling 33
Analysis of ion implanted silicon by RBS-channeling: influence of the damage model 31
Atomistic model of defects for the simulation of RBS-channeling measurements in ion irradiated silicon 31
Different methods for the determination of damage profiles in Si from RBS-channeling spectra: a comparison 30
Ion implantation induced swelling in 6H-SiC 29
Ion-channeling analysis of As relocation in heavily doped Si: As irradiated with high-energy ions 28
Codice MC-BCA per simulazione 2D impianto ionico in SiC 26
RBS-channeling analysis of virgin 6H-SiC: Experiments and Monte Carlo simulations 19
Dynamic Monte Carlo simulation of nonlinear damage growth during ion implantation of crystalline silicon 15
Totale 889
Categoria #
all - tutte 2.837
article - articoli 2.325
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 5.162


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/20247 0 0 0 0 0 0 0 0 0 0 5 2
2024/2025483 1 0 52 10 149 22 6 37 20 34 76 76
2025/2026399 25 46 44 88 158 29 9 0 0 0 0 0
Totale 889