CNR Institutional Research Information System

ALBERTAZZI, EROS
 Distribuzione geografica
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Continente #
AS - Asia 506
NA - Nord America 417
EU - Europa 122
SA - Sud America 117
AF - Africa 10
OC - Oceania 1
Continente sconosciuto - Info sul continente non disponibili 0
Totale 1.173
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Nazione #
US - Stati Uniti d'America 398
SG - Singapore 209
CN - Cina 118
BR - Brasile 85
VN - Vietnam 61
HK - Hong Kong 46
NL - Olanda 35
FR - Francia 27
KR - Corea 18
IT - Italia 15
CO - Colombia 8
AR - Argentina 7
BD - Bangladesh 7
FI - Finlandia 7
GB - Regno Unito 7
JP - Giappone 7
DE - Germania 6
EC - Ecuador 6
IN - India 5
MX - Messico 5
PL - Polonia 5
PY - Paraguay 5
TR - Turchia 5
CA - Canada 4
IL - Israele 4
IQ - Iraq 4
JM - Giamaica 4
UZ - Uzbekistan 4
VE - Venezuela 4
ES - Italia 3
MA - Marocco 3
MY - Malesia 3
ZA - Sudafrica 3
CZ - Repubblica Ceca 2
DO - Repubblica Dominicana 2
DZ - Algeria 2
ID - Indonesia 2
KE - Kenya 2
NP - Nepal 2
PH - Filippine 2
PK - Pakistan 2
RU - Federazione Russa 2
SA - Arabia Saudita 2
UA - Ucraina 2
AL - Albania 1
AT - Austria 1
AU - Australia 1
BO - Bolivia 1
BY - Bielorussia 1
CH - Svizzera 1
CL - Cile 1
CR - Costa Rica 1
EE - Estonia 1
GE - Georgia 1
GR - Grecia 1
HN - Honduras 1
KG - Kirghizistan 1
LT - Lituania 1
MD - Moldavia 1
PA - Panama 1
PS - Palestinian Territory 1
RS - Serbia 1
SE - Svezia 1
SK - Slovacchia (Repubblica Slovacca) 1
TH - Thailandia 1
TJ - Tagikistan 1
TT - Trinidad e Tobago 1
Totale 1.173
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Città #
Santa Clara 184
Singapore 117
Hong Kong 44
Hefei 36
San Jose 29
Ashburn 26
Beijing 24
Ho Chi Minh City 21
Lauterbourg 19
Los Angeles 18
Hanoi 17
Seoul 17
São Paulo 7
Newark 5
Warsaw 5
Orem 4
Paris 4
Rio de Janeiro 4
Tashkent 4
Tokyo 4
Turku 4
Asunción 3
Atlanta 3
Belo Horizonte 3
Bogotá 3
Brooklyn 3
Buffalo 3
Bắc Ninh 3
Casablanca 3
Council Bluffs 3
Da Nang 3
Helsinki 3
Johannesburg 3
Kingston 3
Medellín 3
Milan 3
Naples 3
New York 3
Bologna 2
Cabo Frio 2
Cadiz 2
Caxias do Sul 2
Dallas 2
Denver 2
Figino 2
Formosa 2
Fortaleza 2
Frankfurt am Main 2
Guayaquil 2
Haiphong 2
Kathmandu 2
Lead Hill 2
Marion 2
Matteson 2
Mexico City 2
Minamishinagawa 2
Montreal 2
Mumbai 2
Nairobi 2
Niterói 2
Petaling Jaya 2
Philadelphia 2
Ponta Porã 2
Punto Fijo 2
Quito 2
Reggio Emilia 2
Secaucus 2
Acalanes Ridge 1
Afogados da Ingazeira 1
Afragola 1
Alegrete 1
Algiers 1
Alvorada 1
Amsterdam 1
Andalusia 1
Araruama 1
Athens 1
Baghdad 1
Barreiras 1
Belgrade 1
Belém 1
Bengaluru 1
Benito Juarez 1
Berazategui 1
Bernal Oeste 1
Betim 1
Bishkek 1
Bismarck 1
Blumenau 1
Boardman 1
Botuverá 1
Brainerd 1
Brandon 1
Bratislava 1
Bridgeton 1
Burlington 1
Campina Grande 1
Campinas 1
Can Tho 1
Canoinhas 1
Totale 735
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Nome #
Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si 90
KING 87
Investigation of heavily damaged ion implanted Si by atomistic simulation of Rutherford backscattering channeling spectra 71
Channeling characterization of defects in silicon: an atomistic approach 57
Interpretation of ion-channeling spectra in ion-implanted Si with models of structurally relaxed point defects and clusters 55
Atomistic modeling of ion channeling in Si with point defects: the role of lattice relaxation 52
Ab initio structures of AsmV complexes and the simulation of Rutherford backscattering channeling spectra in heavily As-doped crystalline silicon 47
Charge states distribution of 3350 kev He ions channeled in silicon 47
Binary collision approximation modeling of ion-induced damage effects in crystalline 6H-SiC 46
Computer simulation of ion channeling in Si containing structurally relaxed point defects 45
Defect-induced homogeneous amorphization of silicon: the role of defect structure and population 45
The Monte Carlo binary collision approximation applied to the simulation of the ion implantation process in single crystal SiC: high dose effects 45
Codice MC-BCA per simulazione 2D impianto ionico in SiC 43
Lattice location of As in heavily doped Si:As investigated by atomistic simulation of RBS-c spectra 43
Channeling energy loss of He2++ in Si by transmission and back-scattering measurements: Experiments and Computer modelling 43
Atomistic simulation of ion channeling in heavily doped Si : As 42
Analysis of ion implanted Silicon by RBS-channeling: influence of the damage model. 40
Determination of He electronic energy loss in Si by Monte-Carlo simulation of Rutherford backscattering-channeling spectra 40
Analysis of ion implanted silicon by RBS-channeling: influence of the damage model 40
Atomistic model of defects for the simulation of RBS-channeling measurements in ion irradiated silicon 38
Ion-channeling analysis of As relocation in heavily doped Si: As irradiated with high-energy ions 37
Ion implantation induced swelling in 6H-SiC 37
Different methods for the determination of damage profiles in Si from RBS-channeling spectra: a comparison 35
RBS-channeling analysis of virgin 6H-SiC: Experiments and Monte Carlo simulations 26
Dynamic Monte Carlo simulation of nonlinear damage growth during ion implantation of crystalline silicon 22
Totale 1.173
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Categoria #
all - tutte 4.062
article - articoli 3.307
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 7.369
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/20247 0 0 0 0 0 0 0 0 0 0 5 2
2024/2025483 1 0 52 10 149 22 6 37 20 34 76 76
2025/2026580 25 46 44 88 158 29 79 20 27 49 8 7
2026/2027103 34 31 38 0 0 0 0 0 0 0 0 0
Totale 1.173