ALBERTAZZI, EROS
 Distribuzione geografica
Continente #
AS - Asia 498
NA - Nord America 363
EU - Europa 121
SA - Sud America 104
AF - Africa 10
OC - Oceania 1
Totale 1.097
Nazione #
US - Stati Uniti d'America 347
SG - Singapore 209
CN - Cina 118
BR - Brasile 82
VN - Vietnam 60
HK - Hong Kong 46
NL - Olanda 35
FR - Francia 27
KR - Corea 18
IT - Italia 15
AR - Argentina 7
FI - Finlandia 7
GB - Regno Unito 7
JP - Giappone 7
DE - Germania 6
BD - Bangladesh 5
EC - Ecuador 5
IN - India 5
MX - Messico 5
PL - Polonia 5
PY - Paraguay 5
IL - Israele 4
TR - Turchia 4
UZ - Uzbekistan 4
CA - Canada 3
CO - Colombia 3
ES - Italia 3
IQ - Iraq 3
JM - Giamaica 3
MA - Marocco 3
ZA - Sudafrica 3
CZ - Repubblica Ceca 2
DO - Repubblica Dominicana 2
DZ - Algeria 2
KE - Kenya 2
MY - Malesia 2
NP - Nepal 2
PH - Filippine 2
PK - Pakistan 2
RU - Federazione Russa 2
SA - Arabia Saudita 2
UA - Ucraina 2
AL - Albania 1
AT - Austria 1
AU - Australia 1
BO - Bolivia 1
BY - Bielorussia 1
CH - Svizzera 1
CL - Cile 1
CR - Costa Rica 1
EE - Estonia 1
GE - Georgia 1
GR - Grecia 1
ID - Indonesia 1
KG - Kirghizistan 1
MD - Moldavia 1
PA - Panama 1
PS - Palestinian Territory 1
RS - Serbia 1
SE - Svezia 1
SK - Slovacchia (Repubblica Slovacca) 1
TJ - Tagikistan 1
TT - Trinidad e Tobago 1
Totale 1.097
Città #
Santa Clara 183
Singapore 117
Hong Kong 44
Hefei 36
San Jose 26
Beijing 24
Ashburn 23
Ho Chi Minh City 21
Lauterbourg 19
Hanoi 17
Seoul 17
Los Angeles 16
São Paulo 7
Newark 5
Warsaw 5
Orem 4
Paris 4
Rio de Janeiro 4
Tashkent 4
Tokyo 4
Turku 4
Asunción 3
Belo Horizonte 3
Brooklyn 3
Buffalo 3
Bắc Ninh 3
Casablanca 3
Da Nang 3
Helsinki 3
Johannesburg 3
Milan 3
Naples 3
New York 3
Atlanta 2
Bologna 2
Cabo Frio 2
Cadiz 2
Caxias do Sul 2
Dallas 2
Denver 2
Figino 2
Formosa 2
Fortaleza 2
Frankfurt am Main 2
Guayaquil 2
Haiphong 2
Kathmandu 2
Kingston 2
Lead Hill 2
Marion 2
Matteson 2
Mexico City 2
Minamishinagawa 2
Montreal 2
Mumbai 2
Nairobi 2
Niterói 2
Petaling Jaya 2
Ponta Porã 2
Quito 2
Reggio Emilia 2
Acalanes Ridge 1
Afogados da Ingazeira 1
Afragola 1
Alegrete 1
Algiers 1
Alvorada 1
Amsterdam 1
Andalusia 1
Araruama 1
Athens 1
Baghdad 1
Barreiras 1
Belgrade 1
Belém 1
Bengaluru 1
Benito Juarez 1
Berazategui 1
Bernal Oeste 1
Betim 1
Bishkek 1
Bismarck 1
Blumenau 1
Boardman 1
Bogotá 1
Botuverá 1
Brainerd 1
Brandon 1
Bratislava 1
Campina Grande 1
Campinas 1
Can Tho 1
Canoinhas 1
Carazinho 1
Cayambe 1
Chengdu 1
Chicago 1
Chisinau 1
Chortkiv 1
Concord 1
Totale 715
Nome #
Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si 84
KING 77
Investigation of heavily damaged ion implanted Si by atomistic simulation of Rutherford backscattering channeling spectra 66
Channeling characterization of defects in silicon: an atomistic approach 54
Interpretation of ion-channeling spectra in ion-implanted Si with models of structurally relaxed point defects and clusters 51
Atomistic modeling of ion channeling in Si with point defects: the role of lattice relaxation 49
Ab initio structures of AsmV complexes and the simulation of Rutherford backscattering channeling spectra in heavily As-doped crystalline silicon 45
Charge states distribution of 3350 kev He ions channeled in silicon 45
Computer simulation of ion channeling in Si containing structurally relaxed point defects 44
Defect-induced homogeneous amorphization of silicon: the role of defect structure and population 43
The Monte Carlo binary collision approximation applied to the simulation of the ion implantation process in single crystal SiC: high dose effects 43
Codice MC-BCA per simulazione 2D impianto ionico in SiC 42
Binary collision approximation modeling of ion-induced damage effects in crystalline 6H-SiC 41
Lattice location of As in heavily doped Si:As investigated by atomistic simulation of RBS-c spectra 41
Atomistic simulation of ion channeling in heavily doped Si : As 41
Determination of He electronic energy loss in Si by Monte-Carlo simulation of Rutherford backscattering-channeling spectra 39
Analysis of ion implanted Silicon by RBS-channeling: influence of the damage model. 38
Analysis of ion implanted silicon by RBS-channeling: influence of the damage model 37
Atomistic model of defects for the simulation of RBS-channeling measurements in ion irradiated silicon 37
Channeling energy loss of He2++ in Si by transmission and back-scattering measurements: Experiments and Computer modelling 37
Ion-channeling analysis of As relocation in heavily doped Si: As irradiated with high-energy ions 34
Ion implantation induced swelling in 6H-SiC 34
Different methods for the determination of damage profiles in Si from RBS-channeling spectra: a comparison 33
RBS-channeling analysis of virgin 6H-SiC: Experiments and Monte Carlo simulations 23
Dynamic Monte Carlo simulation of nonlinear damage growth during ion implantation of crystalline silicon 19
Totale 1.097
Categoria #
all - tutte 3.701
article - articoli 3.014
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 6.715


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/20247 0 0 0 0 0 0 0 0 0 0 5 2
2024/2025483 1 0 52 10 149 22 6 37 20 34 76 76
2025/2026580 25 46 44 88 158 29 79 20 27 49 8 7
2026/202727 27 0 0 0 0 0 0 0 0 0 0 0
Totale 1.097