CNR Institutional Research Information System

ALBERTAZZI, EROS
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 187
AS - Asia 51
EU - Europa 3
Totale 241
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 187
SG - Singapore 45
CN - Cina 6
IT - Italia 2
FI - Finlandia 1
Totale 241
Salva come PNG Salva come JPEG
Città #
Santa Clara 180
Singapore 34
Naples 2
Helsinki 1
Totale 217
Salva come PNG Salva come JPEG
Nome #
Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si 12
Interpretation of ion-channeling spectra in ion-implanted Si with models of structurally relaxed point defects and clusters 12
Computer simulation of ion channeling in Si containing structurally relaxed point defects 11
Channeling characterization of defects in silicon: an atomistic approach 11
Ab initio structures of AsmV complexes and the simulation of Rutherford backscattering channeling spectra in heavily As-doped crystalline silicon 11
Analysis of ion implanted silicon by RBS-channeling: influence of the damage model 11
Charge states distribution of 3350 kev He ions channeled in silicon 11
Atomistic simulation of ion channeling in heavily doped Si : As 11
Channeling energy loss of He2++ in Si by transmission and back-scattering measurements: Experiments and Computer modelling 11
Investigation of heavily damaged ion implanted Si by atomistic simulation of Rutherford backscattering channeling spectra 10
Different methods for the determination of damage profiles in Si from RBS-channeling spectra: a comparison 10
Ion-channeling analysis of As relocation in heavily doped Si: As irradiated with high-energy ions 10
Binary collision approximation modeling of ion-induced damage effects in crystalline 6H-SiC 10
Atomistic modeling of ion channeling in Si with point defects: the role of lattice relaxation 10
Analysis of ion implanted Silicon by RBS-channeling: influence of the damage model. 10
Lattice location of As in heavily doped Si:As investigated by atomistic simulation of RBS-c spectra 10
The Monte Carlo binary collision approximation applied to the simulation of the ion implantation process in single crystal SiC: high dose effects 9
Determination of He electronic energy loss in Si by Monte-Carlo simulation of Rutherford backscattering-channeling spectra 9
Atomistic model of defects for the simulation of RBS-channeling measurements in ion irradiated silicon 9
Defect-induced homogeneous amorphization of silicon: the role of defect structure and population 8
RBS-channeling analysis of virgin 6H-SiC: Experiments and Monte Carlo simulations 8
Dynamic Monte Carlo simulation of nonlinear damage growth during ion implantation of crystalline silicon 8
Ion implantation induced swelling in 6H-SiC 8
Codice MC-BCA per simulazione 2D impianto ionico in SiC 6
KING 5
Totale 241
Salva come PNG Salva come JPEG
Categoria #
all - tutte 891
article - articoli 761
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 1.652
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/20247 0 0 0 0 0 0 0 0 0 0 5 2
2024/2025234 1 0 52 10 149 22 0 0 0 0 0 0
Totale 241