CNR Institutional Research Information System

SCAREL, GIOVANNA

SCAREL, GIOVANNA  

INFM (attivo dal 18/11/1923 al 31/12/2021)  

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Risultati 1 - 20 di 31 (tempo di esecuzione: 0.057 secondi).
Titolo Data di pubblicazione Autore(i) File
[(Me3Si)(2)N](3)Lu: Molecular structure and use as Lu and Si source for atomic layer deposition of Lu silicate films 1-gen-2007 Scarel, G; Wiemer, C; Fanciulli, M; Fedushkin, Il; Fukin, Gk; Domrachev, Ga; Lebedinskii, Y; Zenkevich, A; Pavia, G
A study of the growth of Lu2O3 on Si(001) by synchrotron radiation photoemission and transmission electron microscopy 1-gen-2007 Malvestuto, M; Pedio, M; Nannarone, S; Pavia, G; Scarel, G; Fanciulli, M; Boscherini, F
Atomic layer deposition of Lu silicate films using [(Me3Si)(2)N](3)Lu 1-gen-2006 Scarel, G; Wiemer, C; Tallarida, G; Spiga, S; Seguini, G; Bonera, E; Fanciulli, M; Lebedinskii, Y; Zenkevich, A; Pavia, G; Fedushkin, IL; Fukin, GK; Domrachev, GA
Atomic layer deposition of magnetic thin films 1-gen-2007 Mantovan, R; Georcieva, M; Perego, M; Lu, HL; Zenkevich, A; Scarel, G; Fanciulli, M
Atomic layer deposition of NiO films on Si(100) using cyclopentadienyl-type compounds and ozone as precursors 1-gen-2008 Lu, Hl; Scarel, G; Wiemer, C; Perego, M; Spiga, S; Fanciulli, M; Pavia, G
Atomic-layer deposition of Lu2O3 1-gen-2004 G. Scarel; E. Bonera C. Wiemer; G. Tallarida; S. Spiga; M. Fanciulli; I. L. Fedushkin; H. Schumann; Yu. Lebedinskii; A. Zenkevich
Chemical/Structural Nanocharacterization and Electrical Properties of ALD-Grown La2O3ÕSi Interfaces for Advanced Gate Stacks 1-gen-2009 Schamm, S; E Coulon, P; Miao, S; N Volkos, S; H Lu, L; Lamagna, L; Wiemer, C; Tsoutsou, D; Scarel, G; Fanciulli, M
Degradation kinetics of ultrathin HfO2 layers on Si(100) during vacuum annealing monitored with in situ XPS/LEIS and ex situ AFM 1-gen-2007 Zenkevich, A; Lebedinskii, Y; Scarel, G; Fanciulli, M; Baturin, A; Lubovin, N
Dielectric Properties of High-k Oxides: Theory and Experiment for Lu2O3 1-gen-2005 Emiliano Bonera; Giovanna Scarel; Marco Fanciulli; Pietro Delugas; Vincenzo Fiorentini
Effect of rapid thermal annealing on optical and interfacial properties of atomic-layer-deposited Lu2O3 films on Si (100) 1-gen-2008 Lu, HL; Scarel, G; Lamagna, L; Fanciulli, M; Ding, SJ; Zhang, DW
Effects of the oxygen precursor on the electrical and structural propertiesof HfO2 films grown by atomic layer deposition on Ge 1-gen-2005 Spiga, S; Wiemer, C; Tallarida, G; Scarel, G; Ferrari, S; Seguini, G; Fanciulli, M
Effects of the oxygen precursor on the interface between (100) Si and HfO2 films grown by atomic layer deposition 1-gen-2007 Baldovino, S; Spiga, S; Scarel, G; Fanciulli, M
Effects of thermal treatments on chemical composition and electrical properties of ultra-thin Lu oxide layers on Si 1-gen-2007 Zenkevich, A; Lebedinskii, Y; Spiga, S; Wiemer, C; Scarel, G; Fanciulli, M
Energy band alignment at TiO2/Si interface with various interlayers 1-gen-2008 Perego, M; Seguini, G; Scarel, G; Fanciulli, M; Wallrapp, F
Energy-band diagram of metal/Lu2O3/silicon structures 1-gen-2004 Seguini, G; Bonera, E; Spiga, S; Scarel, G; Fanciulli, M
Fabrication of GeO2 layers using a divalent Ge precursor 1-gen-2007 Perego, M; Scarel, G; Scarel, G; Fedushkin, Il; Skatova, Aa
Fabrication of GeO2 layers using a divalent Ge precursor 1-gen-2007 Perego, M.; Scarel, G.; Fanciulli, M.; Fedushkin, I.L.; Skatova, A.A.
Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing 1-gen-2008 Tsoutsou, D; Scarel, G; Debernardi, A; Capelli, SC; Volkos, SN; Lamagna, L; Schamm, S; Coulon, PE; Fanciulli, M
Innovative dielectrics for semiconductor technology 1-gen-2007 Brusa, RS; Macchi, C; Mariazzi, S; Karwasz, GP; Scarel, G; Fanciulli, M
Nondestructive diagnostics of high-kappa dielectrics for advanced electronic devices 1-gen-2006 Dallera, C; Fracassi, F; Braicovich, L; Scarel, G; Wiemer, C; Fanciulli, M; Pavia, G; Cowie, Bcc