Rare-earth oxides are among the materials which are presently studied as possible replacements of amorphous silicon dioxide as gate insulators in nanometric Si devices; in fact, they generally exhibit high values of the dielectric constant ('high kappa'), a necessary requirement to obtain a high capacitance with layer thickness greater than the value below which tunneling currents become unacceptably high. Lu2O3 is one of the rare-earth oxides which may have the required properties in view of its quite high values of kappa and forbidden band gap. Since the envisaged dielectric layers are only a few nanometers thick, a description and a physical understanding of the atomic and electronic structure of the interface are of great importance. In this paper, we report a study by synchrotron radiation photoemission and transmission electron microscopy of the growth of Lu2O3 on Si(001). Thanks to the high spectral and spatial resolution, we provide clear evidence of a rather complex structure in which all silicon suboxides and SiO2 are present at the same time, along with a silicatelike phase and Lu2O3 itself; moreover, some grains and both crystalline and amorphous portions are present. In the photoemission experiment, the contribution of the Si surface to the core level line shapes has been taken into account; in the electron microscopy measurements, we present line scans on the nanometer scale of O, Si, and Lu concentrations and a Fourier transform discussion of the structure of the crystalline portions of the overlayer. The valence band discontinuity, which is measured in situ and is relative to the structurally well characterized interface, is found to be 3.16 +/- 0.16 eV. These findings are discussed in relation to the suitability of Lu2O3 as a high-kappa dielectric and in the context of available theoretical predictions of thermodynamic stability versus the formation of silicon oxide, silicates, and silicides and of the band discontinuity problem. (c) 2007 American Institute of Physics.
A study of the growth of Lu2O3 on Si(001) by synchrotron radiation photoemission and transmission electron microscopy
Pedio M;Nannarone S;Scarel G;Fanciulli M;Boscherini F
2007
Abstract
Rare-earth oxides are among the materials which are presently studied as possible replacements of amorphous silicon dioxide as gate insulators in nanometric Si devices; in fact, they generally exhibit high values of the dielectric constant ('high kappa'), a necessary requirement to obtain a high capacitance with layer thickness greater than the value below which tunneling currents become unacceptably high. Lu2O3 is one of the rare-earth oxides which may have the required properties in view of its quite high values of kappa and forbidden band gap. Since the envisaged dielectric layers are only a few nanometers thick, a description and a physical understanding of the atomic and electronic structure of the interface are of great importance. In this paper, we report a study by synchrotron radiation photoemission and transmission electron microscopy of the growth of Lu2O3 on Si(001). Thanks to the high spectral and spatial resolution, we provide clear evidence of a rather complex structure in which all silicon suboxides and SiO2 are present at the same time, along with a silicatelike phase and Lu2O3 itself; moreover, some grains and both crystalline and amorphous portions are present. In the photoemission experiment, the contribution of the Si surface to the core level line shapes has been taken into account; in the electron microscopy measurements, we present line scans on the nanometer scale of O, Si, and Lu concentrations and a Fourier transform discussion of the structure of the crystalline portions of the overlayer. The valence band discontinuity, which is measured in situ and is relative to the structurally well characterized interface, is found to be 3.16 +/- 0.16 eV. These findings are discussed in relation to the suitability of Lu2O3 as a high-kappa dielectric and in the context of available theoretical predictions of thermodynamic stability versus the formation of silicon oxide, silicates, and silicides and of the band discontinuity problem. (c) 2007 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
