OSSICINI, STEFANO
 Distribuzione geografica
Continente #
AS - Asia 4
EU - Europa 2
NA - Nord America 1
Totale 7
Nazione #
CN - Cina 2
GB - Regno Unito 1
IT - Italia 1
JP - Giappone 1
SG - Singapore 1
US - Stati Uniti d'America 1
Totale 7
Città #
Bologna 1
Forest City 1
London 1
Singapore 1
Tokyo 1
Totale 5
Nome #
Conductance fluctuations in Si nanowires studied from first-principles 1
Surface chemistry effects on work function, ionization potential and electronic affinity of Si(100), Ge(100) surfaces and SiGe heterostructures 1
Understanding doping in silicon nanostructures 1
Ab-initio calculations of luminescence and optical gain properties in silicon nanostructures 1
Ab initio structural and electronic properties of hydrogenated silicon nanoclusters in the ground and excited state 1
Structural features and electronic properties of group-III-, group-IV-, and group-V-doped Si nanocrystallites 1
Band Structure Analysis in SiGe nanowires 1
Totale 7
Categoria #
all - tutte 797
article - articoli 722
book - libri 28
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 1.547


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/20246 0 0 0 0 0 0 0 0 2 0 3 1
2024/20251 1 0 0 0 0 0 0 0 0 0 0 0
Totale 7