The local structure of fluorine incorporated in crystalline silicon following solid phase epitaxial regrowth was investigated by means of x-ray absorption spectroscopy at the F K-edge. We clearly demonstrate that most F is found in SiF4 molecules in the crystalline matrix. A kinetic pathway, which explains our observation and which is also able to rationalize previous results in a common and coherent framework, is proposed.

Formation and incorporation of SiF4 molecules in F-implanted preamorphized Si

D De Salvador;E Napolitani;F Boscherini;S Mirabella;F Priolo;
2009

Abstract

The local structure of fluorine incorporated in crystalline silicon following solid phase epitaxial regrowth was investigated by means of x-ray absorption spectroscopy at the F K-edge. We clearly demonstrate that most F is found in SiF4 molecules in the crystalline matrix. A kinetic pathway, which explains our observation and which is also able to rationalize previous results in a common and coherent framework, is proposed.
2009
Istituto Officina dei Materiali - IOM -
Inglese
95
101908
3
Sì, ma tipo non specificato
XAFS
ion implantation
shallow junctions
5
info:eu-repo/semantics/article
262
D. De Salvador; G. Bisognin; E. Napolitani; M. Mastromatteo; N. Baggio; A. Carnera; F. Boscherini; G. Impellizzeri; S. Mirabella; S. Boninelli; F. Pri...espandi
01 Contributo su Rivista::01.01 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/1044
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