Deposition of thin films of Co- and Mn-oxides as well as of their mixtures with ZrO2 has been carried out by MOCVD using Co(C5H5)2, Mn(C5F6HO2)2(THF)2 and (C5H5)2Zr(CH3)2 as precursors. XRD and XPS analyses of the obtained deposits are reported. Introduction of water vapor into the reaction chamber during the flow of the precursors improved their decomposition efficiency and the quality of the films.
Metal Organic Chemical Vapor Deposition of Co-, Mn-, Co-Zr and Mn-Zr oxide thin films
ZANELLA, PIERINO;CARTA, GIOVANNI;BENETOLLO, FRANCO;BARRECA, DAVIDE;ROSSETTO, GILBERTO LUCIO
2000
Abstract
Deposition of thin films of Co- and Mn-oxides as well as of their mixtures with ZrO2 has been carried out by MOCVD using Co(C5H5)2, Mn(C5F6HO2)2(THF)2 and (C5H5)2Zr(CH3)2 as precursors. XRD and XPS analyses of the obtained deposits are reported. Introduction of water vapor into the reaction chamber during the flow of the precursors improved their decomposition efficiency and the quality of the films.File in questo prodotto:
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