The dependence of the hole mobility on the dopant concentration ranging from 5 ?ó 10 15 to 1 times; 10 19 atoms/cm 2 was determined at room temperature in Al-implanted Si samples. The trend was obtained by the use of Hall effect and resistivity measurements on the van der Pauw pattern in combination with secondary-ion mass spectrometry and spreading resistance analysis. The mobility data are in a quite good agreement with the Wagner curve for boron in the high Al concentration region while they approach the Thurber boron curves at low concentrations. This result indicates that the neutral and ionized impurity scattering mechanisms are not critically different for Al- and B-doped samples. The mobility-dopant concentration curve can be employed to convert the resistivity profiles obtained by spreading resistance measurements into hole concentration distributions for Al-doped samples.
Hole mobility in aluminium implanted silicon
La Via F;Raineri V;
1997
Abstract
The dependence of the hole mobility on the dopant concentration ranging from 5 ?ó 10 15 to 1 times; 10 19 atoms/cm 2 was determined at room temperature in Al-implanted Si samples. The trend was obtained by the use of Hall effect and resistivity measurements on the van der Pauw pattern in combination with secondary-ion mass spectrometry and spreading resistance analysis. The mobility data are in a quite good agreement with the Wagner curve for boron in the high Al concentration region while they approach the Thurber boron curves at low concentrations. This result indicates that the neutral and ionized impurity scattering mechanisms are not critically different for Al- and B-doped samples. The mobility-dopant concentration curve can be employed to convert the resistivity profiles obtained by spreading resistance measurements into hole concentration distributions for Al-doped samples.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
