A detailed analysis of the band alignment between molecular beam deposited amorphous HfO2 and GaAs is reported. The conduction band offset, measured by internal photoemission (IPE), is 1.9 +/- 0.2 eV. The valence band offset (VBO) is probed by x-ray photoelectron spectroscopy (XPS). The accurate determination of the VBO requires a careful evaluation of differential charging phenomena and consequently a proper correction of the energy scale. The measured VBO value is 2.1 +/- 0.1 eV. Since the HfO2 gap is 5.6 eV, as detected by photoconductivity analysis, the results obtained by IPE and XPS are in excellent agreement.
Conduction band offset of HfO2 on GaAs
Seguini G;Perego M;Spiga S;Fanciulli M;
2007
Abstract
A detailed analysis of the band alignment between molecular beam deposited amorphous HfO2 and GaAs is reported. The conduction band offset, measured by internal photoemission (IPE), is 1.9 +/- 0.2 eV. The valence band offset (VBO) is probed by x-ray photoelectron spectroscopy (XPS). The accurate determination of the VBO requires a careful evaluation of differential charging phenomena and consequently a proper correction of the energy scale. The measured VBO value is 2.1 +/- 0.1 eV. Since the HfO2 gap is 5.6 eV, as detected by photoconductivity analysis, the results obtained by IPE and XPS are in excellent agreement.File in questo prodotto:
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