The secondary defect annihilation titanium silicidation in Si xGe1-x layers, formed by high dose Ge implantation in (100) silicon, has been studied systematically as a function of the Ge fluence, implantation energy, and TiSi2 thickness. Rutherford backscattering spectrometry and transmission electron microscopy have been used to investigate the damaged SixGe1-x layer recovery and to monitor the germanium diffusion and reaction during the silicidation. For the highest fluence of 3?ó1016 Ge/cm2 (,âà15 at. % Ge) it is found that nearly a complete annihilation of the secondary defects can be achieved after the first low-temperature silicidation step. After a second high-temperature silicidation step all residual defects have been removed. For fluences lower than 3?ó1016 Ge/cm2 a complete recovery is already obtained after the first silicidation step.¬© 1995 American Institute of Physics.
Secondary defect annihilation in ion beam processed SixGe 1-x layers using titanium silicide
La Via F;Lombardo S;Raineri V;
1995
Abstract
The secondary defect annihilation titanium silicidation in Si xGe1-x layers, formed by high dose Ge implantation in (100) silicon, has been studied systematically as a function of the Ge fluence, implantation energy, and TiSi2 thickness. Rutherford backscattering spectrometry and transmission electron microscopy have been used to investigate the damaged SixGe1-x layer recovery and to monitor the germanium diffusion and reaction during the silicidation. For the highest fluence of 3?ó1016 Ge/cm2 (,âà15 at. % Ge) it is found that nearly a complete annihilation of the secondary defects can be achieved after the first low-temperature silicidation step. After a second high-temperature silicidation step all residual defects have been removed. For fluences lower than 3?ó1016 Ge/cm2 a complete recovery is already obtained after the first silicidation step.¬© 1995 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
