The thermal stability of thin cobalt silicide films obtained by ion beam assisted deposition of Co on polycrystalline Si has been studied. A large improvement has been obtained depositing Co at 470¬?C with an Ar+ beam energy of 1000 eV: no increase of the sheet resistance was observed until 1000¬?C. the improvement has been connected to the stability of the CoSi2/polysilicon interface. ¬© 1995.
Improved thermal stability of cobalt silicide formed by ion beam assisted deposition on polysilicon
La Via F;Raineri V;
1995-01-01
Abstract
The thermal stability of thin cobalt silicide films obtained by ion beam assisted deposition of Co on polycrystalline Si has been studied. A large improvement has been obtained depositing Co at 470¬?C with an Ar+ beam energy of 1000 eV: no increase of the sheet resistance was observed until 1000¬?C. the improvement has been connected to the stability of the CoSi2/polysilicon interface. ¬© 1995.File in questo prodotto:
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