aCu3Ti4O12 (CCTO) thin films have been successfully deposited by Metal Organic Chemical Vapor Deposition (MOCVD) technique. An appealing approach based on a molten multi-component precursor source has been applied. The molten mixture consists of the Ca(hfa) 2otetraglyme, Ti(tmhd)2(O-iPr)2, and Cu(tmhd)2 [Hhfa= 1,1,1,5,5,5-hexafluoro-2,4-pentanedione; tetraglyme= 2,5,8,11,14-pentaoxapentadecane; Htmhd= 2,2,6,6-tetramethyl-3,5-heptandione; O-iPr= iso-propoxide] precursors. Film complete structural and morphological characterizations have been carried out using several techniques [X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM)].The dielectric properties have been evaluated at microscopic as well as at nanoscopic scale by scanning impedance microscopy
CaCu3Ti4O12 thin films for capacitive applications: MOCVD synthesis and nanoscopic microscopic characterization
Lo Nigro R;Toro;R G;Fiorenza P;
2009
Abstract
aCu3Ti4O12 (CCTO) thin films have been successfully deposited by Metal Organic Chemical Vapor Deposition (MOCVD) technique. An appealing approach based on a molten multi-component precursor source has been applied. The molten mixture consists of the Ca(hfa) 2otetraglyme, Ti(tmhd)2(O-iPr)2, and Cu(tmhd)2 [Hhfa= 1,1,1,5,5,5-hexafluoro-2,4-pentanedione; tetraglyme= 2,5,8,11,14-pentaoxapentadecane; Htmhd= 2,2,6,6-tetramethyl-3,5-heptandione; O-iPr= iso-propoxide] precursors. Film complete structural and morphological characterizations have been carried out using several techniques [X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM)].The dielectric properties have been evaluated at microscopic as well as at nanoscopic scale by scanning impedance microscopyI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
