FIORENZA, PATRICK
FIORENZA, PATRICK
Istituto per la Microelettronica e Microsistemi - IMM
Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor deposition
2023 Esposito, F; Bosi, M; Attolini, G; Rossi, F; Panasci, SALVATORE ETHAN; Fiorenza, P; Giannazzo, F; Fabbri, F; Seravalli, L
Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing
2022 Fiorenza P.; Maiolo L.; Fortunato G.; Zielinski M.; La Via F.; Giannazzo F.; Roccaforte F.
Reliable evaluation method for interface state density and effective channel mobility in lateral 4H-SiC MOSFETs
2022 Valletta, Antonio; Roccaforte, Fabrizio; LA MAGNA, Antonino; Fortunato, Guglielmo; Fiorenza, Patrick
Gold nanoparticle assisted synthesis of MoS2 monolayers by chemical vapor deposition
2021 Seravalli, L; Bosi, M; Fiorenza, P; Panasci, Se; Orsi, D; Rotunno, E; Cristofolini, L; Rossi, F; Giannazzo, F; Fabbri, F
Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide
2020 Spera, Monia; Greco, Giuseppe; Severino, Andrea; Vivona, Marilena; Fiorenza, Patrick; Giannazzo, Filippo; Roccaforte, Fabrizio
Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition
2020 Schiliro, Emanuela; Fiorenza, Patrick; Bongiorno, Corrado; Spinella, Corrado; DI FRANCO, Salvatore; Greco, Giuseppe; LO NIGRO, Raffaella; Roccaforte, Fabrizio
Current transport mechanisms in au-free metallizations for cmos compatible gan hemt technology
2020 Roccaforte, F; Spera, M; Di Franco, S; Nigro, Rl; Fiorenza, P; Giannazzo, F; Iucolano, F; Greco, G
Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO2/4H-SiC MOSFETs
2020 Fiorenza, Patrick; Giannazzo, Filippo; Cascino, Salvatore; Saggio, Mario; Roccaforte, Fabrizio
Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy
2020 Filippo Giannazzo ; Giuseppe Greco ; Salvatore Di Franco ; Patrick Fiorenza ; Ioannis Deretzis ; Antonino La Magna ; Corrado Bongiorno ; Massimo Zimbone ; Francesco La Via ; Marcin Zielinski ; Fabrizio Roccaforte
Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
2020 LO NIGRO, Raffaella; Schiliro, Emanuela; Fiorenza, Patrick; Roccaforte, Fabrizio
Nanoscale insights on the origin of the power mosfets breakdown after extremely long high temperature reverse bias stress
2020 Fiorenza, P; Alessandrino, M; Carbone, B; Di Martino, C; Russo, A; Saggio, M; Venuto, C; Zanetti, E; Bongiorno, C; Giannazzo, F; Roccaforte, F
On the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopy
2020 Fiorenza, P; Schiliro, E; Giannazzo, F; Bongiorno, C; Zielinski, M; La Via, F; Roccaforte, F
Silicon Carbide-Based Electronic Device and Method of Manufacturing the Same
2020 Patrick Fiorenza; Fabrizio Roccaforte; Mario Saggio
Technologies for normally-off GaN HEMTs
2020 Greco, Giuseppe; Fiorenza, Patrick; Iucolano, Ferdinando; Roccaforte, Fabrizio
Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress
2020 Fiorenza, P; Alessandrino, M S; Carbone, B; Di Martino, C; Russo, A; Saggio, M; Venuto, C; Zanetti, E; Giannazzo, F; Roccaforte, F
An Overview of Normally-Off GaN-Based High Electron Mobility Transistors
2019 Roccaforte, Fabrizio; Greco, Giuseppe; Fiorenza, Patrick; Iucolano, Ferdinando
Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review
2019 Fiorenza, Patrick; Giannazzo, Filippo; Roccaforte, Fabrizio
Comparison Between Single Al2O3 Or HfO2 Single Dielectric Layers And Their Nanolaminated Systems
2019 LO NIGRO, Raffaella; Schilirò, Emanuela; Fiorenza, Patrick; Roccaforte, Fabrizio
Effect of high temperature annealing (T > 1650 degrees C) on the morphological and electrical properties of p-type implanted 4H-SiC layers
2019 Spera, M; Corso, D; Di Franco, S; Greco, G; Severino, A; Fiorenza, P; Giannazzo, F; Roccaforte, F
Effects of thermal annealing processes in phosphorous implanted 4H-SiC layers
2019 Severino, A; Mello, D; Boninelli, S; Roccaforte, F; Giannazzo, F; Fiorenza, P; Calabretta, C; Calcagno, L; Piluso, N; Arena, G
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor deposition | 1-gen-2023 | Esposito, F; Bosi, M; Attolini, G; Rossi, F; Panasci, SALVATORE ETHAN; Fiorenza, P; Giannazzo, F; Fabbri, F; Seravalli, L | |
| Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing | 1-gen-2022 | Fiorenza P.; Maiolo L.; Fortunato G.; Zielinski M.; La Via F.; Giannazzo F.; Roccaforte F. | |
| Reliable evaluation method for interface state density and effective channel mobility in lateral 4H-SiC MOSFETs | 1-gen-2022 | Valletta, Antonio; Roccaforte, Fabrizio; LA MAGNA, Antonino; Fortunato, Guglielmo; Fiorenza, Patrick | |
| Gold nanoparticle assisted synthesis of MoS2 monolayers by chemical vapor deposition | 1-gen-2021 | Seravalli, L; Bosi, M; Fiorenza, P; Panasci, Se; Orsi, D; Rotunno, E; Cristofolini, L; Rossi, F; Giannazzo, F; Fabbri, F | |
| Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide | 1-gen-2020 | Spera, Monia; Greco, Giuseppe; Severino, Andrea; Vivona, Marilena; Fiorenza, Patrick; Giannazzo, Filippo; Roccaforte, Fabrizio | |
| Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition | 1-gen-2020 | Schiliro, Emanuela; Fiorenza, Patrick; Bongiorno, Corrado; Spinella, Corrado; DI FRANCO, Salvatore; Greco, Giuseppe; LO NIGRO, Raffaella; Roccaforte, Fabrizio | |
| Current transport mechanisms in au-free metallizations for cmos compatible gan hemt technology | 1-gen-2020 | Roccaforte, F; Spera, M; Di Franco, S; Nigro, Rl; Fiorenza, P; Giannazzo, F; Iucolano, F; Greco, G | |
| Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO2/4H-SiC MOSFETs | 1-gen-2020 | Fiorenza, Patrick; Giannazzo, Filippo; Cascino, Salvatore; Saggio, Mario; Roccaforte, Fabrizio | |
| Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy | 1-gen-2020 | Filippo Giannazzo ; Giuseppe Greco ; Salvatore Di Franco ; Patrick Fiorenza ; Ioannis Deretzis ; Antonino La Magna ; Corrado Bongiorno ; Massimo Zimbone ; Francesco La Via ; Marcin Zielinski ; Fabrizio Roccaforte | |
| Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices | 1-gen-2020 | LO NIGRO, Raffaella; Schiliro, Emanuela; Fiorenza, Patrick; Roccaforte, Fabrizio | |
| Nanoscale insights on the origin of the power mosfets breakdown after extremely long high temperature reverse bias stress | 1-gen-2020 | Fiorenza, P; Alessandrino, M; Carbone, B; Di Martino, C; Russo, A; Saggio, M; Venuto, C; Zanetti, E; Bongiorno, C; Giannazzo, F; Roccaforte, F | |
| On the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopy | 1-gen-2020 | Fiorenza, P; Schiliro, E; Giannazzo, F; Bongiorno, C; Zielinski, M; La Via, F; Roccaforte, F | |
| Silicon Carbide-Based Electronic Device and Method of Manufacturing the Same | 1-gen-2020 | Patrick Fiorenza; Fabrizio Roccaforte; Mario Saggio | |
| Technologies for normally-off GaN HEMTs | 1-gen-2020 | Greco, Giuseppe; Fiorenza, Patrick; Iucolano, Ferdinando; Roccaforte, Fabrizio | |
| Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress | 1-gen-2020 | Fiorenza, P; Alessandrino, M S; Carbone, B; Di Martino, C; Russo, A; Saggio, M; Venuto, C; Zanetti, E; Giannazzo, F; Roccaforte, F | |
| An Overview of Normally-Off GaN-Based High Electron Mobility Transistors | 1-gen-2019 | Roccaforte, Fabrizio; Greco, Giuseppe; Fiorenza, Patrick; Iucolano, Ferdinando | |
| Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review | 1-gen-2019 | Fiorenza, Patrick; Giannazzo, Filippo; Roccaforte, Fabrizio | |
| Comparison Between Single Al2O3 Or HfO2 Single Dielectric Layers And Their Nanolaminated Systems | 1-gen-2019 | LO NIGRO, Raffaella; Schilirò, Emanuela; Fiorenza, Patrick; Roccaforte, Fabrizio | |
| Effect of high temperature annealing (T > 1650 degrees C) on the morphological and electrical properties of p-type implanted 4H-SiC layers | 1-gen-2019 | Spera, M; Corso, D; Di Franco, S; Greco, G; Severino, A; Fiorenza, P; Giannazzo, F; Roccaforte, F | |
| Effects of thermal annealing processes in phosphorous implanted 4H-SiC layers | 1-gen-2019 | Severino, A; Mello, D; Boninelli, S; Roccaforte, F; Giannazzo, F; Fiorenza, P; Calabretta, C; Calcagno, L; Piluso, N; Arena, G |