A process has been developed to grow multi-epy high doped structure. Trichlorosilane (TCS) and Ethylene have been used as precursor; Nitrogen (N 2) and trimethylaluminum (TMA) as doping source. The SIMS and SCM analysis show that using this silicon precursor very abrupt N ++/P+/N+ junctions (40-60 nm) can be obtained with low background doping concentration in a single epitaxial growth run. © (2009) Trans Tech Publications, Switzerland.
Thin SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor with very abrupt junctions
Giannazzo F;La Via F
2009
Abstract
A process has been developed to grow multi-epy high doped structure. Trichlorosilane (TCS) and Ethylene have been used as precursor; Nitrogen (N 2) and trimethylaluminum (TMA) as doping source. The SIMS and SCM analysis show that using this silicon precursor very abrupt N ++/P+/N+ junctions (40-60 nm) can be obtained with low background doping concentration in a single epitaxial growth run. © (2009) Trans Tech Publications, Switzerland.File in questo prodotto:
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