The growth rate of 4H-SiC epi layers has been increased up to 100 OEºm/h with the use of trichlorosilane instead of silane as silicon precursor. The epitaxial layers grown with this process have been characterized by electrical, optical and structural characterization methods. Schottky diodes, manufactured on the epitaxial layer grown with trichlorosilane at 1600 ¬?C, have higher yield and lower defect density in comparison to diodes realized on epilayers grown with the standard epitaxial process. ¬© (2009) Trans Tech Publications, Switzerland.
SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate.
La Via F;Di Franco S;
2009
Abstract
The growth rate of 4H-SiC epi layers has been increased up to 100 OEºm/h with the use of trichlorosilane instead of silane as silicon precursor. The epitaxial layers grown with this process have been characterized by electrical, optical and structural characterization methods. Schottky diodes, manufactured on the epitaxial layer grown with trichlorosilane at 1600 ¬?C, have higher yield and lower defect density in comparison to diodes realized on epilayers grown with the standard epitaxial process. ¬© (2009) Trans Tech Publications, Switzerland.File in questo prodotto:
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