A novel Monte Carlo kinetic model has been developed and implemented to predict growth rate regimes and defect formation for the homo-epitaxial growth of various SiC polytypes on different substrates. Using this model we have studied the generation of both point like and extended defects in terms of the growth rate and off-cut angle, finding qualitative agreement with both electrical and optical characterization and analytical results. © (2009) Trans Tech Publications.
Theoretical monte carlo study of the formation and evolution of defects in the homoepitaxial growth of SiC
La Magna A;Fiorenza P;La Via F
2009
Abstract
A novel Monte Carlo kinetic model has been developed and implemented to predict growth rate regimes and defect formation for the homo-epitaxial growth of various SiC polytypes on different substrates. Using this model we have studied the generation of both point like and extended defects in terms of the growth rate and off-cut angle, finding qualitative agreement with both electrical and optical characterization and analytical results. © (2009) Trans Tech Publications.File in questo prodotto:
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