Comparison is made between GaAs films grown on Ge substrates by MOVPE and CSVT under various conditions. Nucleation of misfit dislocations, presence of stacking faults and relaxation rate are correlated together with growth temperature. The role of each type of defects and the way to impede them are discussed.
X-Ray study of GaAs/Ge heterostructures: Relationship between interfacial defects and growth process
C PELOSI;C FRIGERI;
1997
Abstract
Comparison is made between GaAs films grown on Ge substrates by MOVPE and CSVT under various conditions. Nucleation of misfit dislocations, presence of stacking faults and relaxation rate are correlated together with growth temperature. The role of each type of defects and the way to impede them are discussed.File in questo prodotto:
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