The electrical properties of dopants in Si are of primary importance for the realization of electronic devices. Indium represents a promising p-type dopant whose electrical properties are improved by codoping with C. From theoretical studies In and C are expected to pair in the Si matrix in order to lower the strain energy. In this contribution we provide the first direct experimental determination of the sites of In and In-C complexes in Si. (c) 2006 American Institute of Physics.
Experimental determination of the local geometry around In and In-C complexes in Si
D'Acapito F;Scalese S;Italia M;Alippi P;
2006
Abstract
The electrical properties of dopants in Si are of primary importance for the realization of electronic devices. Indium represents a promising p-type dopant whose electrical properties are improved by codoping with C. From theoretical studies In and C are expected to pair in the Si matrix in order to lower the strain energy. In this contribution we provide the first direct experimental determination of the sites of In and In-C complexes in Si. (c) 2006 American Institute of Physics.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
