Thin films of MgO are grown by CVD, with a high growth rate, on Si(001) and quartz substrates in the temperature range400 550 °C, using bis(methylcyclopentadienyl)magnesium [Mg(CH3-C5H4)2] as the precursor. The films obtained are investigatedby X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and opticalabsorption, in order to investigate the interrelations between film properties and processing conditions. Cubic phase MgO(periclase) films, characterized by a low carbon contamination and a granular surface morphology, are obtained.
CVD of MgO Thin Films from Bis(methylcyclopentadienyl) magnesium
Carta G;El Habra N;Crociani L;Rossetto G;Zanella P;Barreca D;
2007
Abstract
Thin films of MgO are grown by CVD, with a high growth rate, on Si(001) and quartz substrates in the temperature range400 550 °C, using bis(methylcyclopentadienyl)magnesium [Mg(CH3-C5H4)2] as the precursor. The films obtained are investigatedby X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and opticalabsorption, in order to investigate the interrelations between film properties and processing conditions. Cubic phase MgO(periclase) films, characterized by a low carbon contamination and a granular surface morphology, are obtained.File in questo prodotto:
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Descrizione: CVD of MgO Thin Films from Bis(methylcyclopentadienyl) magnesium
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