Thin films of MgO are grown by CVD, with a high growth rate, on Si(001) and quartz substrates in the temperature range 400 550 °C, using bis(methylcyclopentadienyl)magnesium [Mg(CH3-C5H4)2] as the precursor. The films obtained are investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and optical absorption, in order to investigate the interrelations between film properties and processing conditions. Cubic phase MgO (periclase) films, characterized by a low carbon contamination and a granular surface morphology, are obtained.
CVD of MgO Thin Films from Bis(methylcyclopentadienyl) magnesium
EL HABRA, NAIDA;CARTA, GIOVANNI;BARRECA, DAVIDE;CROCIANI, LAURA;ROSSETTO, GILBERTO LUCIO;ZANELLA, PIERINO
2007
Abstract
Thin films of MgO are grown by CVD, with a high growth rate, on Si(001) and quartz substrates in the temperature range 400 550 °C, using bis(methylcyclopentadienyl)magnesium [Mg(CH3-C5H4)2] as the precursor. The films obtained are investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and optical absorption, in order to investigate the interrelations between film properties and processing conditions. Cubic phase MgO (periclase) films, characterized by a low carbon contamination and a granular surface morphology, are obtained.File in questo prodotto:
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