The anisotropic wet micromachining of silicon, based on a water solution of potassium hydroxide (KOH), is a standard fabrication process that is extensively exploited in the realization of very complex microsystems, which comprise cantilevers, membranes, and bridges. A nanostructured self-assembled biofilm of amphiphilic proteins, the hydrophobins, was deposited on crystalline silicon by solution deposition and characterized by variable-angle spectroscopic ellipsometry (VASE). This procedure formed chemically and mechanically stable mono- and multilayers of self-assembled proteins. The biomolecular membrane has been tested as masking material in the KOH wet etch of the crystalline silicon. The process has been monitored by VASE and atomic force microscopy measurements. Because of the high persistence of the protein biofilm, the hydrophobin-coated silicon surface is perfectly protected during the standard KOH micromachining process.

Self-assembled biofilm of hydrophobins protects the silicon surface in the KOH wet etch process

De Stefano Luca;Rea Ilaria;Giocondo Michele;Rendina Ivo
2007

Abstract

The anisotropic wet micromachining of silicon, based on a water solution of potassium hydroxide (KOH), is a standard fabrication process that is extensively exploited in the realization of very complex microsystems, which comprise cantilevers, membranes, and bridges. A nanostructured self-assembled biofilm of amphiphilic proteins, the hydrophobins, was deposited on crystalline silicon by solution deposition and characterized by variable-angle spectroscopic ellipsometry (VASE). This procedure formed chemically and mechanically stable mono- and multilayers of self-assembled proteins. The biomolecular membrane has been tested as masking material in the KOH wet etch of the crystalline silicon. The process has been monitored by VASE and atomic force microscopy measurements. Because of the high persistence of the protein biofilm, the hydrophobin-coated silicon surface is perfectly protected during the standard KOH micromachining process.
2007
Istituto per la Microelettronica e Microsistemi - IMM
Istituto per i Processi Chimico-Fisici - IPCF
INFM
SC3
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/155349
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