BST thin films are intriguing candidates for innovative applications in microelectronics.On this basis, the development of suitable synthetic routes so as to obtain BST films With controlled properties, plays an important role. In this contribution, we present preliminary investigations on BTS films obtained by MOCVD using novel second-generation Ba and Sr molecular precursors, namely (Ba(thd)2(pmdien)(Meim)) (Hthd = 2,2,6,6-tetramethyl-3,5-heptanedione; pmdien = N,N,N?,N'',N''-pentamethyldiethylenetriamine; Meim = methylimidazole) (Sr2(thd)4(imH)2(EtOH)) (imH = imidazole). Titanium tetra-isopropoxide Ti(OPr)4 was used as Ti source. The film deposition was carried out on quartz and silicon substrates at 450°C reactor temoperature and followed by annealing in air up to 800° C, aimed at tailoring the structural, compositional and morphological properties of the final films.
Novel molecular precursors for the MOCVD of Ba1-xSrxTiO3 thin films
CARTA, GIOVANNI;GERBASI, ROSALBA;BARRECA, DAVIDE
2005
Abstract
BST thin films are intriguing candidates for innovative applications in microelectronics.On this basis, the development of suitable synthetic routes so as to obtain BST films With controlled properties, plays an important role. In this contribution, we present preliminary investigations on BTS films obtained by MOCVD using novel second-generation Ba and Sr molecular precursors, namely (Ba(thd)2(pmdien)(Meim)) (Hthd = 2,2,6,6-tetramethyl-3,5-heptanedione; pmdien = N,N,N?,N'',N''-pentamethyldiethylenetriamine; Meim = methylimidazole) (Sr2(thd)4(imH)2(EtOH)) (imH = imidazole). Titanium tetra-isopropoxide Ti(OPr)4 was used as Ti source. The film deposition was carried out on quartz and silicon substrates at 450°C reactor temoperature and followed by annealing in air up to 800° C, aimed at tailoring the structural, compositional and morphological properties of the final films.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
