La-doped ZrO2 thin films grown by O3-based atomic layer deposition directly on Ge100 exhibit a dielectric constant of 29. Upon annealing in N2 at 400 °C, a high value 40 is extracted for film thickness below 15 nm. Compositional depth profiling allows to correlate this observation with a remarkable Ge interdiffusion from the substrate which is consistent with the stabilization of the tetragonal ZrO2 phase. Ge interaction with the oxide stack and the formation of a germanate-like interfacial region, which acts as an electrical passivation for the Ge surface, are also investigated.
Thermally induced permittivity enhancement in La-doped ZrO2 grown by atomic layer deposition on Ge (100)
C Wiemer;A Molle;M Perego;M Fanciulli
2009
Abstract
La-doped ZrO2 thin films grown by O3-based atomic layer deposition directly on Ge100 exhibit a dielectric constant of 29. Upon annealing in N2 at 400 °C, a high value 40 is extracted for film thickness below 15 nm. Compositional depth profiling allows to correlate this observation with a remarkable Ge interdiffusion from the substrate which is consistent with the stabilization of the tetragonal ZrO2 phase. Ge interaction with the oxide stack and the formation of a germanate-like interfacial region, which acts as an electrical passivation for the Ge surface, are also investigated.File in questo prodotto:
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