We report on structural, magnetic, and transport properties of La(x)MnO(3-delta) (LMO) thin films, epitaxially grown on SrTiO(3) substrates by molecular beam epitaxy. Transport properties were investigated as a function of the La/Mn stoichiometry and the oxygen content. Optimal oxygenated LMO films (with stoichiometry ratio La/Mn=0.88) show a metal-insulator transitions temperature T(MI) similar to 387 K and magnetotransport similar to those found in strontium-doped La(1-x)Sr(x)MnO(3) manganites compounds. Also in presence of a La/Mn slight unbalance (namely, x=0.98), LMO films show a very high T(MI)similar to 370 K. However, LMO samples with La/Mn ratio larger than one, show severely depressed conducting properties, being insulating for x > 1.10. All these findings clearly demonstrate that the lanthanum deficiency is a very efficient way to dope manganites, as in the case of bivalent cation-substitution.
Enhanced transport properties in LaxMnO3- thin films epitaxially grown on SrTiO3 substrates: the profound impact of the oxygen content
Pasquale Orgiani;Carmela Aruta;Regina Ciancio;Luigi Maritato
2009
Abstract
We report on structural, magnetic, and transport properties of La(x)MnO(3-delta) (LMO) thin films, epitaxially grown on SrTiO(3) substrates by molecular beam epitaxy. Transport properties were investigated as a function of the La/Mn stoichiometry and the oxygen content. Optimal oxygenated LMO films (with stoichiometry ratio La/Mn=0.88) show a metal-insulator transitions temperature T(MI) similar to 387 K and magnetotransport similar to those found in strontium-doped La(1-x)Sr(x)MnO(3) manganites compounds. Also in presence of a La/Mn slight unbalance (namely, x=0.98), LMO films show a very high T(MI)similar to 370 K. However, LMO samples with La/Mn ratio larger than one, show severely depressed conducting properties, being insulating for x > 1.10. All these findings clearly demonstrate that the lanthanum deficiency is a very efficient way to dope manganites, as in the case of bivalent cation-substitution.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.