We report on the design, preparation by Molecular Beam Epitaxy and study of low-density InAs quantum dot structures grown on metamorphic InGaAs layers for the realization of single-photon sources at telecom wavelengths.
Emission at telecom wavelenghts from low density quantum dots grown on metamorphic InGaAs layers
G Trevisi;L Seravalli;P Frigeri
2011
Abstract
We report on the design, preparation by Molecular Beam Epitaxy and study of low-density InAs quantum dot structures grown on metamorphic InGaAs layers for the realization of single-photon sources at telecom wavelengths.File in questo prodotto:
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