Whole 4H-SiC 3 and 4 inches wafers optical characterization is a rapid system for assessing the quality of substrates and epitaxial layers. Spatially resolved micro-photoluminescence (mu PL) and micro-Raman (mu R) spectroscopy are performed on large areas allowing obtaining several structural properties as extended defect surface density, doping concentration uniformity, stress field of wafers. With our modified apparatus it is possible to perform mu PL and mu R fast characterization with the same resolution on the same area. Moreover it is easy to perform high resolution mu PL and mu R analyses on critical areas, i.e. high defective areas, for device manufacturing.
Large area optical characterization of 3 and 4 inches 4H-SiC wafers
Piluso N;La Via F
2012
Abstract
Whole 4H-SiC 3 and 4 inches wafers optical characterization is a rapid system for assessing the quality of substrates and epitaxial layers. Spatially resolved micro-photoluminescence (mu PL) and micro-Raman (mu R) spectroscopy are performed on large areas allowing obtaining several structural properties as extended defect surface density, doping concentration uniformity, stress field of wafers. With our modified apparatus it is possible to perform mu PL and mu R fast characterization with the same resolution on the same area. Moreover it is easy to perform high resolution mu PL and mu R analyses on critical areas, i.e. high defective areas, for device manufacturing.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
