Interfacial properties of SiO2 grown on 4H-SiC: comparison between N2O and wet O-2 oxidation ambient

Many investigations have been conducted on the growth conditions of SiO2 on SiC to improve the oxide quality and the properties of the silicon carbide-silicon dioxide interface. In this work a comparison between a wet oxidation and an oxidation in N2O ambient diluted in N-2 is proposed. The interface state density D-it near the conduction-band edge of SiC has been evaluated by conventional C-V measurements obtaining results similar or better than the literature data. Furthermore, the slow trapping phenomena have been studied and preliminary results are reported.