This paper reports on the defects created in a 6H-SiC P-type substrate by a process of ion implantation and a quite low temperature annealing (1300 degrees C), suitable for the realization of the source/drain regions of a MOSFET because it does not give rise to step bunching phenomena. Current voltage measurements showed the presence of a group of diodes featured by excess current. The effects of defects under the implanted layer on the transport properties of the diodes were investigated by DLTS: four hole traps were detected in all the measured diodes; besides, a broadened peak around 550 K was detected in the diodes that show excess current.
Correlation between current transport and defects in n+/p 6H-SiC diodes
Moscatelli F;Nipoti R;Poggi A
2006
Abstract
This paper reports on the defects created in a 6H-SiC P-type substrate by a process of ion implantation and a quite low temperature annealing (1300 degrees C), suitable for the realization of the source/drain regions of a MOSFET because it does not give rise to step bunching phenomena. Current voltage measurements showed the presence of a group of diodes featured by excess current. The effects of defects under the implanted layer on the transport properties of the diodes were investigated by DLTS: four hole traps were detected in all the measured diodes; besides, a broadened peak around 550 K was detected in the diodes that show excess current.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
