The fabrication of a fully ion-implanted and microwave annealed vertical p-i-n diode using high purity semi-insulating 4H-SiC substrate has been demonstrated for the first time. The thickness of the intrinsic region is the wafer thickness 350 mu m. The anode and cathode of the diode have been doped with Al and P, respectively, to concentrations of few times 10(20) cm(-3) by ion implantation. The post implantation annealing has been performed by microwave heating the samples up to 2100 degrees C.
Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers
R Nipoti;F Tamarri;F Moscatelli;
2012
Abstract
The fabrication of a fully ion-implanted and microwave annealed vertical p-i-n diode using high purity semi-insulating 4H-SiC substrate has been demonstrated for the first time. The thickness of the intrinsic region is the wafer thickness 350 mu m. The anode and cathode of the diode have been doped with Al and P, respectively, to concentrations of few times 10(20) cm(-3) by ion implantation. The post implantation annealing has been performed by microwave heating the samples up to 2100 degrees C.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
