Deep ion implanted p-n junctions in 6H-SiC were characterised by secondary ion (SIMS) and scanning capacitance microscopy (SCM) techniques. On-axis and off-axis 6H-SiC wafers were used. Al and N box-shaped profiles were implanted, respectively, in n- an p-type wafers. These profiles were about 1-1.5 mum thick and 4 x 10(19) cm(-3) height. Ion energy and fluence values in the ranges, respectively, 330 keV - 2.2 MeV and 7 x 10(13) cm(-2) - 1.3 x 10(15) cm(-2), were used. The implantation temperature was 305degreesC. Annealing processes were done in an inductively heated furnace at 1650degreesC for 30 min. Cross section SCM line-scans were compared with SIMS profiles. Agreement between profile shapes was found.
Comparison between chemical and electrical profiles in Al+ or N+ implanted and annealed 6H-SiC
Nipoti R;Raineri;
2002
Abstract
Deep ion implanted p-n junctions in 6H-SiC were characterised by secondary ion (SIMS) and scanning capacitance microscopy (SCM) techniques. On-axis and off-axis 6H-SiC wafers were used. Al and N box-shaped profiles were implanted, respectively, in n- an p-type wafers. These profiles were about 1-1.5 mum thick and 4 x 10(19) cm(-3) height. Ion energy and fluence values in the ranges, respectively, 330 keV - 2.2 MeV and 7 x 10(13) cm(-2) - 1.3 x 10(15) cm(-2), were used. The implantation temperature was 305degreesC. Annealing processes were done in an inductively heated furnace at 1650degreesC for 30 min. Cross section SCM line-scans were compared with SIMS profiles. Agreement between profile shapes was found.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
