This work presents measurements of the charge-collection properties of 4H-SiC Schottky diodes under alpha radition and investigates th einfluence of native and alpha induced defects on the detector performance. The contribution of the diffusion of minority carriers to the charge collection efficiency is pointed out. Values of 500 ns and 95 micro-s for the hole and electron life-time, respectively
Charged particle detection properties of epitaxial 4H-SiC Schottky diodes
Nipoti R;Donolato C
2001
Abstract
This work presents measurements of the charge-collection properties of 4H-SiC Schottky diodes under alpha radition and investigates th einfluence of native and alpha induced defects on the detector performance. The contribution of the diffusion of minority carriers to the charge collection efficiency is pointed out. Values of 500 ns and 95 micro-s for the hole and electron life-time, respectivelyFile in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
