A structural study on the epitaxial relationships of TiSi2 on <100 > silicon has been carried out by transmission electron microscopy. Metallic films, heat treated at high temperatures (750 and 850°C), react with silicon forming the orthorhombic TiSi2 phase with quite large grains, up to 5 µm in diameter, which present some orientation relationships with the crystalline bulk. They are [011]TiSi2//[001]Si, [110]TiSi2//[001]Si, [010]TiSi2//[001]Si.

ON THE EPITAXIAL RELATIONSHIPS OF TISI2 ON SILICON

NIPOTI R;ARMIGLIATO A
1985

Abstract

A structural study on the epitaxial relationships of TiSi2 on <100 > silicon has been carried out by transmission electron microscopy. Metallic films, heat treated at high temperatures (750 and 850°C), react with silicon forming the orthorhombic TiSi2 phase with quite large grains, up to 5 µm in diameter, which present some orientation relationships with the crystalline bulk. They are [011]TiSi2//[001]Si, [110]TiSi2//[001]Si, [010]TiSi2//[001]Si.
1985
Inglese
24
11
1421
1424
3
http://jjap.jsap.jp/link?JJAP/24/1421/
Sì, ma tipo non specificato
titanium silicide
2
info:eu-repo/semantics/article
262
Nipoti, R; Armigliato, A
01 Contributo su Rivista::01.01 Articolo in rivista
none
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/206533
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