ARMIGLIATO, ALDO
ARMIGLIATO, ALDO
Istituto per la Microelettronica e Microsistemi - IMM
Comparison of Cliff-Lorimer-Based Methods of Scanning Transmission Electron Microscopy (STEM) Quantitative X-Ray Microanalysis for Application to Silicon Oxycarbides Thin Films
2018 Parisini A.; Frabboni S.; Gazzadi G.C.; Rosa R.; Armigliato A.
Thickness and orientation dependence of the average HAADF STEM normalized intensity: a comparison with Monte Carlo and Multislice simulations.
2017 Andrea Parisini; Stefano Frabboni; Gian Carlo Gazzadi; Aldo Armigliato; Rodolfo Rosa.
Quantitative X-ray microanalysis of thin NiO films by Monte Carlo and Cliff-Lorimer methods
2014 Aldo Armigliato; Stefano Frabboni; Gian Carlo Gazzadi;Rodolfo Rosa
FIB Preparation of a NiO Wedge-Lamella and STEM X-Ray Microanalysis for the Determination of the Experimental k(O-Ni) Cliff-Lorimer Coefficient
2013 Armigliato, A; Frabboni, S; Gazzadi, G C; Rosa, R
Characterization of the PSG/Si interface of H3PO4 doping process for solar cells
2011 Armigliato, A; Nobili, D; Solmi, S; Blendin, G; Schum, B; Lachowicz, A; Horzel, J
Effect of nitrogen implantation at the SiO2/SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel
2010 Poggi A Moscatelli F; Solmi S; Armigliato A; Belsito L; Nipoti R;
Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs
2010 Moscatelli, F; Poggi, A; Solmi, S; Nipoti, R; Armigliato, A; Belsito, Luca; L,
Nitridation of the SiO2/SiC Interface by N+ implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs
2010 Moscatelli, F; Poggi, A; Solmi, S; Nipoti, R; Armigliato, A; Belsito, L
Presentazione orale
2010 Horzel, J; Schum, B; Lachowicz, A; Rossa, J; Vaas, K; Jahn, M; Gassenbauer, Y; von Camp, H; Boubekeur, H; Blendin, G; Weber, U; Seidl, A; Armigliato, A; Seid, F; Hantschel, T; Eyben, P; Vinzelberg, S; Gerstl, Ssa; Schmidt, W
X-Ray Microanalysis Combined with Monte Carlo Simulation for the Analysis of Layered Thin Films: The Case of Carbon Contamination
2009 Armigliato, A; Rosa, R
Electron diffraction with ten nanometer beam size for strain analysis of nanodevices
2008 Armigliato, A; Frabboni, S; Gazzadi, GC
Quantitative strain mapping in nanoelectronic silicon devices by convergent beam electron diffraction
2008 Armigliato A.; Balboni R.; Frabboni S.; Spessot A.
Application of the parametric bootstrap method to determine statistical errors in quantitative X-ray microanalysis of thin films
2007 Armigliato, A; Balboni, R; Rosa, R
Method for determination of the displacement field in patterned nanostructures by TEM/CBED analysis of split high-order Laue zone line profiles
2007 Spessot, A; Frabboni, S; Balboni, R; Armigliato, A
Nano beam and convergent beam elecron diffraction for strain anaysis in nano-electronics
2007 Armigliato A.; Balboni R.; Migliori A.;Pizzochero G.
Structural and analytical characterization by scanning transmission electron microscopy of silicon-based nanostructures
2007 Armigliato A; Balboni R; Parisini A
Convergent beam electron diffraction investigation of strain induced by Ti self-aligned silicides in shallow trench Si isolation structures
2006 Armigliato, A; Spessot, A; Balboni, R; Benedetti, A; Carnevale, G; Frabboni, S; Mastracchio, G; Pavia, G
Damage and recovery in boron doped silicon on insulator layers after high energy Si+ implantation
2006 Ferri, M; Solmi, S; Nobili, D; Armigliato, A
Diaframma per microscopio elettronico e procedimento per realizzare tale diaframma
2006 Armigliato A; Gazzadi G; Guerri S; Migliori A ; Pizzochero G
HOLZ Line Splitting coupled to a Recursive Procedure. A Tool for the Displacement Field Determination in Nanostructures
2006 Spessot, ; Frabboni, S; Balboni, R; Armigliato, A