We report on a photoluminescence and photoreflectance investigation of ALMBE grown InAs self-assembled quantum dots embedded in InxGa1-xAs matrix. It is shown that the emission wavelength at room temperature of ALMBE InAs QDs can be tuned at 1.3 ?m for x ~ 0.1. The observed red-shift of the QD- related optical transitions for 0<×<0.28 is discussed by comparing photoluminescence and photoreflectance results with the main parameters which determine the tuning mechanism.
Optical investigation of ALMBE grown InAs self-assembled quantum dots embedded in InxGa1-xAs matrix
Franchi S;Frigeri P;Trevisi;
2001
Abstract
We report on a photoluminescence and photoreflectance investigation of ALMBE grown InAs self-assembled quantum dots embedded in InxGa1-xAs matrix. It is shown that the emission wavelength at room temperature of ALMBE InAs QDs can be tuned at 1.3 ?m for x ~ 0.1. The observed red-shift of the QD- related optical transitions for 0<×<0.28 is discussed by comparing photoluminescence and photoreflectance results with the main parameters which determine the tuning mechanism.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
