This work presents measurements of the charge-collection properties of 4H-SiC Schottky diodes under alpha radiation and investigates the influence of native and alpha induced defects on the detector performance. The contribution of the diffusion of minority carriers to the charge collection efficiency is pointed out. Values of 500 ns and 95 mus are inferred for the hole and electron lifetime, respectively.
Charged particle detection properties of epitaxial 4H-SiC Schottky diodes
Nipoti R;Donolato;
2001
Abstract
This work presents measurements of the charge-collection properties of 4H-SiC Schottky diodes under alpha radiation and investigates the influence of native and alpha induced defects on the detector performance. The contribution of the diffusion of minority carriers to the charge collection efficiency is pointed out. Values of 500 ns and 95 mus are inferred for the hole and electron lifetime, respectively.File in questo prodotto:
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