We report on the epitaxial growth of Cu(In,Ga)Se2 (CIGS) thin films on n-type Ge substrates using the Pulsed Electron Deposition (PED) technique. Single-crystal films with smooth interface and no dislocations were obtained at a substrate temperature of 300°C with thickness above 1.5?m. CIGS/Ge epilayers were characterized in terms of Transmission Electron Microscopy, X-Ray Diffraction and Photoluminescence. Preliminary results are very promising for a variety of potential applications as absorber layer in single and multi-junction thin-film solar cells.
Single-crystal CuIn1 -xGaxSe2 films grown on lattice-matched Ge by low-temperature Pulsed Electron Deposition technique
Bronzoni M;Frigeri P;Gombia E;Mezzadri F;Nasi L;Pattini F;Rampino S;Seravalli L;Trevisi;
2014
Abstract
We report on the epitaxial growth of Cu(In,Ga)Se2 (CIGS) thin films on n-type Ge substrates using the Pulsed Electron Deposition (PED) technique. Single-crystal films with smooth interface and no dislocations were obtained at a substrate temperature of 300°C with thickness above 1.5?m. CIGS/Ge epilayers were characterized in terms of Transmission Electron Microscopy, X-Ray Diffraction and Photoluminescence. Preliminary results are very promising for a variety of potential applications as absorber layer in single and multi-junction thin-film solar cells.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
