In the last years, the possibility of light generation and/or amplification in silicon, based on Raman emission, has achieved great results. However, some significant limitations, inherent to the physics of silicon, have been pointed out, too. In order to overcome these limitations, a possible option is to consider low dimensional silicon. On this line of argument, an approach based on Raman scattering in porous silicon is presented. We prove two significant advantage with respect to silicon: the broadening of spontaneous Raman emission and the tuning of the Stokes shift. Finally, we discuss about the prospect of Raman amplifier in porous silicon.
Raman Approach for Study of Amplification in Porous Silicon at 1.5 micron
Ferrara MA;Sirleto L;Rendina I
2006
Abstract
In the last years, the possibility of light generation and/or amplification in silicon, based on Raman emission, has achieved great results. However, some significant limitations, inherent to the physics of silicon, have been pointed out, too. In order to overcome these limitations, a possible option is to consider low dimensional silicon. On this line of argument, an approach based on Raman scattering in porous silicon is presented. We prove two significant advantage with respect to silicon: the broadening of spontaneous Raman emission and the tuning of the Stokes shift. Finally, we discuss about the prospect of Raman amplifier in porous silicon.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
