The paper presents a calibration of scanning microwave microscopy signals for doping profiling in MOS systems. The experimentally obtained S-parameters are matched through a linear relation to the calculated MOS system capacitance and then to doping. The proposed approach is verified by simulations with the equivalent LCR circuit as well as by experimental results obtained on a calibration sample with differently doped areas.
Nanoscale characterization of MOS systems by microwaves: Dopant profiling calibration
Michalas L;Lucibello A;Proietti E;Marcelli R
2015
Abstract
The paper presents a calibration of scanning microwave microscopy signals for doping profiling in MOS systems. The experimentally obtained S-parameters are matched through a linear relation to the calculated MOS system capacitance and then to doping. The proposed approach is verified by simulations with the equivalent LCR circuit as well as by experimental results obtained on a calibration sample with differently doped areas.File in questo prodotto:
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