In this paper, in order to generate radiation at 1.54 micron, an approach based on Raman scattering in porous silicon is presented. Experimental results, proving spontaneous Raman emission at 1.5 micron and tuning of the Stokes shift, are reported.
Spontaneous Raman emission and tunable stokes shift in porous silicon
Sirleto L;Ferrara M A;Rendina I;
2005
Abstract
In this paper, in order to generate radiation at 1.54 micron, an approach based on Raman scattering in porous silicon is presented. Experimental results, proving spontaneous Raman emission at 1.5 micron and tuning of the Stokes shift, are reported.File in questo prodotto:
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