Surface texturization is usually performed to enhance light absorption in silicon solar Cells. In the work, we describe a maskless plasma process that employs CF4/H2 plasma to create nanoscale structures in silicon. Desirable texturing effect has been achieved by creating the plasma in a range of pressure and RF power of 0.05-0.1 mbar and 200-280 W, respectively. In the different operating conditions the plasma has been investigated by means of an optical emission spectroscopy (OES). The treated silicon surface shows reflectance lower than 10% in the visible region as well as in near-IR region.
Formation of nanostructures in silicon by a maskless plasma process
M Pedroni;E Vassallo;R Caniello;A Cremona;F Ghezzi;L Laguardia;
2015
Abstract
Surface texturization is usually performed to enhance light absorption in silicon solar Cells. In the work, we describe a maskless plasma process that employs CF4/H2 plasma to create nanoscale structures in silicon. Desirable texturing effect has been achieved by creating the plasma in a range of pressure and RF power of 0.05-0.1 mbar and 200-280 W, respectively. In the different operating conditions the plasma has been investigated by means of an optical emission spectroscopy (OES). The treated silicon surface shows reflectance lower than 10% in the visible region as well as in near-IR region.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
