It has been shown that concentration of nitrogen as low as 0.01 lowers the band gap of the Ga(1-x)In(x)As(1-y)N(y) and Ga(1-x)In(x)P(1-y)N(y) alloy by a significant fraction of eV, showing a "giant" bowing effect. The alloy Ga(1-x)In(x)As(1-y)N(y) with y = 0.35x is lattice-matched to GaAs (or Ge), and this material was used both as active layer for 1 eV laser and as fourth junction Ge lattice-matched in high-efficiency InGaP/GaAs/InGaAsN/Ge multijunction solar cells. The growth of GaAsN and the understanding of its physical properties is a necessary step to control the growth of the quaternary InGaAsN alloy.
Mixed narrow band gap III-V alloys such as GaAsN and InGaAsN are attracting considerable interest for both their fundamental properties and the possibility to use them in novel solar cells for space applications.
Characterisation of GaAsN layers grown by MOVPE
Pelosi C;Attolini G;Bosi M;Avella M;Calicchio M;
2006
Abstract
Mixed narrow band gap III-V alloys such as GaAsN and InGaAsN are attracting considerable interest for both their fundamental properties and the possibility to use them in novel solar cells for space applications.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.