4H-SiC junction photodiodes, obtained by aluminium (Al) ion implantation on low doped n-type epilayers are widely characterized observing an extremely low dark current density < 1nA/cm2 at -100 V up to 90°C, a peak responsivity of 0.11 A/W at 280 nm corresponding to a quantum efficiency of 50% and a visible blindness > 103. The absence of optically active defects and pairs recombination centers was monitored by electro-optical and Emission Microscopy measurements.
Large area visible blind 4H-SiC P+/N UV photodiode obtained by Aluminium implantation
A Sciuto;S Di Franco;F Roccaforte
2016
Abstract
4H-SiC junction photodiodes, obtained by aluminium (Al) ion implantation on low doped n-type epilayers are widely characterized observing an extremely low dark current density < 1nA/cm2 at -100 V up to 90°C, a peak responsivity of 0.11 A/W at 280 nm corresponding to a quantum efficiency of 50% and a visible blindness > 103. The absence of optically active defects and pairs recombination centers was monitored by electro-optical and Emission Microscopy measurements.File in questo prodotto:
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