Lateral photoconductivity of an In0.4Ga0.6As/GaAs structure with multi-layered quantum dots (QDs) is studied. The structure was prepared by molecular-beam epitaxy on semi-insulating GaAs substrate covered by 100 nm thick undoped GaAs buffer. Ten 10 MLs In0.4Ga0.6As QD layers with n = 1018 cm-3 separated by 50 nm thick undoped GaAs spacers were grown. A similar structure with ten 4.5 MLs In0.4Ga0.6As wetting layers (WLs) without QD was grown for comparison. The WL layers are quantum wells confined by the GaAs spacers.
PHOTOCONDUCTIVITY OF THE InGaAs/GaAs STRUCTURES WITH QUANTUM DOTS AND WETTING LAYERS
LSeravalli;E Gombia;M Calicchio;G Trevisi;P Frigeri;
2016
Abstract
Lateral photoconductivity of an In0.4Ga0.6As/GaAs structure with multi-layered quantum dots (QDs) is studied. The structure was prepared by molecular-beam epitaxy on semi-insulating GaAs substrate covered by 100 nm thick undoped GaAs buffer. Ten 10 MLs In0.4Ga0.6As QD layers with n = 1018 cm-3 separated by 50 nm thick undoped GaAs spacers were grown. A similar structure with ten 4.5 MLs In0.4Ga0.6As wetting layers (WLs) without QD was grown for comparison. The WL layers are quantum wells confined by the GaAs spacers.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
