Photovoltage (PV) of metamorphic InAs/In0.15Ga0.85As/GaAs and standard InAs/GaAs structures with a quantum dot (QD) monolayer is studied (Fig. 1). The structures were prepared by molecular-beam epitaxy on semi-insulating GaAs substrates. The top Au contacts were deposited on the upper buffer n-layers, whereas the opposite contacts were both deposited on the bottom buffers (AuGeNi contact) and soldered down to the bottoms of substrates (In contact).
BIPOLAR PHOTOVOLTAGE OF THE InAs/In(Ga)As/GaAs HETEROSTRUCTURES WITH QUANTUM DOTS
Seravalli L;Gombia E;Trevisi G;Frigeri P;
2016
Abstract
Photovoltage (PV) of metamorphic InAs/In0.15Ga0.85As/GaAs and standard InAs/GaAs structures with a quantum dot (QD) monolayer is studied (Fig. 1). The structures were prepared by molecular-beam epitaxy on semi-insulating GaAs substrates. The top Au contacts were deposited on the upper buffer n-layers, whereas the opposite contacts were both deposited on the bottom buffers (AuGeNi contact) and soldered down to the bottoms of substrates (In contact).File in questo prodotto:
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