SrCuO2/Sr0.9La0.1CuO2/SrCuO2 trilayers were grown by oxide-molecular beam epitaxy. The thicknesses of the top and bottom SrCuO2 layers were fixed, while the thickness of the infinite-layer electron-doped cuprate Sr0.9La0.1CuO2 central layer was systematically changed. Transmission electron microscopy, x-ray reflectivity and x-ray diffraction measurements were performed to assess the sample quality and the abruptness of the interfaces. Electrical transport measurements as a function of temperature and as a function of central layer thickness, confirm that the normal state properties of the trilayers are altered by the confinement of the charge carriers in the central layer.

Carrier confinement effects observed in the normal-state electrical transport of electron-doped cuprate trilayers

Orgiani Pasquale;Maritato Luigi
2019

Abstract

SrCuO2/Sr0.9La0.1CuO2/SrCuO2 trilayers were grown by oxide-molecular beam epitaxy. The thicknesses of the top and bottom SrCuO2 layers were fixed, while the thickness of the infinite-layer electron-doped cuprate Sr0.9La0.1CuO2 central layer was systematically changed. Transmission electron microscopy, x-ray reflectivity and x-ray diffraction measurements were performed to assess the sample quality and the abruptness of the interfaces. Electrical transport measurements as a function of temperature and as a function of central layer thickness, confirm that the normal state properties of the trilayers are altered by the confinement of the charge carriers in the central layer.
2019
Istituto Superconduttori, materiali innovativi e dispositivi - SPIN
interfaces
molecular beam epitaxy
quantum wells
electron-doped cuprates
oxides
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/364658
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