An overview of the interaction between monolayer graphene and SiO2 dielectric substrate is reported focusing on the effect this latter has on doping and strain induced by thermal treatments in controlled atmosphere. The disentanglement of strain and doping is highlighted and the comparison with another dielectric substrate of Al2O3 evidences the critical role that the substrate has in the electronic properties of graphene. The reported results pave the way for microelectronic devices based on graphene on dielectrics and for Fermi level tuning in composites of graphene and nanoparticles.
Graphene-SiO2 Interaction from Composites to Doping
Giannazzo Filippo;Lo Nigro Raffaella;
2019
Abstract
An overview of the interaction between monolayer graphene and SiO2 dielectric substrate is reported focusing on the effect this latter has on doping and strain induced by thermal treatments in controlled atmosphere. The disentanglement of strain and doping is highlighted and the comparison with another dielectric substrate of Al2O3 evidences the critical role that the substrate has in the electronic properties of graphene. The reported results pave the way for microelectronic devices based on graphene on dielectrics and for Fermi level tuning in composites of graphene and nanoparticles.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
